Photodetectors based on 2D material/Si heterostructure

Jingshu Zhou; Juehan Yang; Zhongming Wei

doi:10.1088/1674-4926/41/8/080401

Journals >Journal of Semiconductors >Volume 41 >Issue 8 >Page 080401 > Article

Journal of Semiconductors
Vol. 41, Issue 8, 080401 (2020)

Photodetectors based on 2D material/Si heterostructure

Jingshu Zhou, Juehan Yang, and Zhongming Wei

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State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

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DOI: 10.1088/1674-4926/41/8/080401 Cite this Article

Jingshu Zhou, Juehan Yang, Zhongming Wei. Photodetectors based on 2D material/Si heterostructure[J]. Journal of Semiconductors, 2020, 41(8): 080401 Copy Citation Text

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(Color online) (a) Schematic representations of the Si/MoS2 p–n heterojunction photodetector. (b) AFM image of MoS2 layer at metal contact and heterojunction interface[8]. Copyright © 2017, Springer Nature.

Fig. 1. (Color online) (a) Schematic representations of the Si/MoS₂ p–n heterojunction photodetector. (b) AFM image of MoS₂ layer at metal contact and heterojunction interface^[8]. Copyright © 2017, Springer Nature.

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Jingshu Zhou, Juehan Yang, Zhongming Wei. Photodetectors based on 2D material/Si heterostructure[J]. Journal of Semiconductors, 2020, 41(8): 080401

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