• Acta Optica Sinica
  • Vol. 40, Issue 9, 0931001 (2020)
Jinyan Wang1、2, Jinlong Zhang1、2、*, Hongfei Jiao1、2, and Xinbin Cheng1、2
Author Affiliations
  • 1Institute of Precision Optical Engineering, School of Physics Science and Engineering, Tongji University, Shanghai, 200092, China
  • 2MOE Key Laboratory of Advanced Micro-Structured Materials, Tongji University, Shanghai, 200092, China
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    DOI: 10.3788/AOS202040.0931001 Cite this Article Set citation alerts
    Jinyan Wang, Jinlong Zhang, Hongfei Jiao, Xinbin Cheng. Study on High Reflective Film in 121.6 nm Far Ultraviolet[J]. Acta Optica Sinica, 2020, 40(9): 0931001 Copy Citation Text show less
    Reflectance spectrum designed for Cr+Al+MgF2 samples
    Fig. 1. Reflectance spectrum designed for Cr+Al+MgF2 samples
    Reflectance at central wavelength of 121.6 nm for LaF3/MgF2 samples under different designs. (a) Different film stacks; (b) different thickness ratios of H to L
    Fig. 2. Reflectance at central wavelength of 121.6 nm for LaF3/MgF2 samples under different designs. (a) Different film stacks; (b) different thickness ratios of H to L
    Measured reflectance spectra of Al+MgF2 samples under different conditions. (a) Different deposition processes; (b) different annealing temperatures
    Fig. 3. Measured reflectance spectra of Al+MgF2 samples under different conditions. (a) Different deposition processes; (b) different annealing temperatures
    Roughness of different Al+MgF2 samples. (a) Sample A; (b) sample B; (c) sample C
    Fig. 4. Roughness of different Al+MgF2 samples. (a) Sample A; (b) sample B; (c) sample C
    Reflectance comparison of LaF3/MgF2 samples prepared at room temperature
    Fig. 5. Reflectance comparison of LaF3/MgF2 samples prepared at room temperature
    Reflectance of LaF3/MgF2 samples prepared at room temperature under different annealing processes
    Fig. 6. Reflectance of LaF3/MgF2 samples prepared at room temperature under different annealing processes
    Roughness of LaF3/MgF2 samples prepared at room temperature. (a) No annealing; (b) annealing-200 ℃/2 h; (c) annealing-250 ℃/2 h; (d) annealing-300 ℃/2 h
    Fig. 7. Roughness of LaF3/MgF2 samples prepared at room temperature. (a) No annealing; (b) annealing-200 ℃/2 h; (c) annealing-250 ℃/2 h; (d) annealing-300 ℃/2 h
    Surfaces of LaF3/MgF2 samples prepared at room temperature. (a) No annealing; (b) annealing-200 ℃/2 h; (c) annealing-250 ℃/2 h; (d) annealing-300 ℃/2 h
    Fig. 8. Surfaces of LaF3/MgF2 samples prepared at room temperature. (a) No annealing; (b) annealing-200 ℃/2 h; (c) annealing-250 ℃/2 h; (d) annealing-300 ℃/2 h
    ConditionFilmThickness /nmDeposition rate /(nm·s-1)Temperature /℃
    Deposition-RTCr150.623
    Al10012.023
    MgF2250.823
    Deposition-HTCr150.623
    Al1001223
    MgF250.823
    MgF2200.8250
    Table 1. Parameters for Al+MgF2 sample
    SampleRoughness σ /nmTIS /%R /%
    Sample A1.422.1380
    Sample B1.191.5085
    Sample C1.091.2690
    Table 2. Reflectance and scattering parameters of Al+MgF2 samples at 121.6 nm
    ConditionRoughness σ /nmTIS /%R /%
    No annealing1.121.3178
    Annealing-200 ℃/2 h2.194.9273
    Annealing-250 ℃/2 h2.305.4167
    Annealing-300 ℃/2 h2.365.6966
    Table 3. Reflectance and scattering parameters at 122.5 nm of LaF3/MgF2 samples prepared at room temperature
    Jinyan Wang, Jinlong Zhang, Hongfei Jiao, Xinbin Cheng. Study on High Reflective Film in 121.6 nm Far Ultraviolet[J]. Acta Optica Sinica, 2020, 40(9): 0931001
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