Researching | Ni/Pd-based ohmic contacts to p-GaN through p-InGaN/p+-GaN contacting layers

Journals >Journal of Semiconductors >Volume 43 >Issue 9 >Page 092803 > Article

Journal of Semiconductors
Vol. 43, Issue 9, 092803 (2022)

Ni/Pd-based ohmic contacts to p-GaN through p-InGaN/p⁺-GaN contacting layers

Minglong Zhang^1、2, Masao Ikeda^1、2、*, Siyi Huang^1、2, Jianping Liu^1、2、**, Jianjun Zhu², Shuming Zhang^1、2, and Hui Yang^1、2

Author Affiliations

¹School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China

²Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China

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DOI: 10.1088/1674-4926/43/9/092803 Cite this Article

Minglong Zhang, Masao Ikeda, Siyi Huang, Jianping Liu, Jianjun Zhu, Shuming Zhang, Hui Yang. Ni/Pd-based ohmic contacts to p-GaN through p-InGaN/p⁺-GaN contacting layers[J]. Journal of Semiconductors, 2022, 43(9): 092803 Copy Citation Text

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References

[1] S Nakamura. The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes. Science, 281, 956(1998).

[2] L Hu, X Y Ren, J P Liu et al. High-power hybrid GaN-based green laser diodes with ITO cladding layer. Photonics Res, 8, 279(2020).

[3] L Li, K Nomoto, M Pan et al. GaN HEMTs on Si with regrown contacts and cutoff/maximum oscillation frequencies of 250/204 GHz. IEEE Electron Device Lett, 41, 689(2020).

[4] Y Koide, T Maeda, T Kawakami et al. Effects of annealing in an oxygen ambient on electrical properties of ohmic contacts to p-type GaN. J Electron Mater, 28, 341(1999).

[5] B P Luther, S E Mohney, T N Jackson et al. Investigation of the mechanism for Ohmic contact formation in Al and Ti/Al contacts to n-type GaN. Appl Phys Lett, 70, 57(1997).

[6] K Singh, A Chauhan, M Mathew et al. Formation of non-alloyed Ti/Al/Ni/Au low-resistance ohmic contacts on reactively ion-etched n-type GaN by surface treatment for GaN light-emitting diodes applications. Appl Phys A, 125, 24(2019).

[7] T Tanaka, A Watanabe, H Amano et al. P-type conduction in Mg-doped GaN and Al0.08Ga0.92N grown by metalorganic vapor phase epitaxy. Appl Phys Lett, 65, 593(1994).

[8] J K Ho, C S Jong, C C Chiu et al. Low-resistance ohmic contacts to p-type GaN. Appl Phys Lett, 74, 1275(1999).

[9] J K Kim, J L Lee, J W Lee et al. Low resistance Pd/Au ohmic contacts to p-type GaN using surface treatment. Appl Phys Lett, 73, 2953(1998).

[10] S Wahid, N Chowdhury, M K Alam et al. Barrier heights and Fermi level pinning in metal contacts on p-type GaN. Appl Phys Lett, 116, 213506(2020).

[11] W J Wang, W Z Xie, Z J Deng et al. Performance improvement of GaN based laser diode using Pd/Ni/Au metallization ohmic contact. Coatings, 9, 291(2019).

[12] I Chary, A Chandolu, B Borisov et al. Influence of surface treatment and annealing temperature. J Electron Mater, 38, 545(2009).

[13] S P R Mallem, W H Ahn, J H Lee et al. Influence of thermal annealing on the PdAl/Au metal stack ohmic contacts to p-AlGaN. Crystals, 10, 1091(2020).

[14] J L Lee, M Weber, J K Kim et al. Ohmic contact formation mechanism of nonalloyed Pd contacts to p-type GaN observed by positron annihilation spectroscopy. Appl Phys Lett, 74, 2289(1999).

[15] J O Song, D S Leem, J S Kwak et al. High-quality nonalloyed rhodium-based ohmic contacts to p-type GaN. Appl Phys Lett, 83, 2372(2003).

[16] J L He, Y Z Zhong, Y Zhou et al. Recovery of p-GaN surface damage induced by dry etching for the formation of p-type Ohmic contact. Appl Phys Express, 12, 055507(2019).

[17] K Kumakura, T Makimoto, N Kobayashi. Ohmic contact to p-GaN using a strained InGaN contact layer and its thermal stability. Jpn J Appl Phys, 42, 2254(2003).

[18] J T Trexler, S J Pearton, P H Holloway et al. Comparison of Ni/Au, Pd/Au, and Cr/Au metallizations for ohmic contacts to p-GaN. MRS Online Proc Libr, 449, 1091(1996).

[19] F Bernardini, V Fiorentini. Spontaneous versus piezoelectric polarization in III-V nitrides: Conceptual aspects and practical consequences. Phys Status Solidi B, 216, 391(1999).

[20] A Weimar, A Lell, G Brüderl et al. Investigation of low-resistance metal contacts on p-type GaN using the linear and circular transmission line method. Phys Status Solidi A, 183, 169(2001).

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Minglong Zhang, Masao Ikeda, Siyi Huang, Jianping Liu, Jianjun Zhu, Shuming Zhang, Hui Yang. Ni/Pd-based ohmic contacts to p-GaN through p-InGaN/p⁺-GaN contacting layers[J]. Journal of Semiconductors, 2022, 43(9): 092803

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