[1] E X Zhang, D M Fleetwood, J A Hachtel et al. Total ionizing dose effects on strained Ge pMOS FinFETs on bulk Si. IEEE Trans Nucl Sci, 64, 226(2017).
[2] I Chatterjee, E X Zhang, B L Bhuva et al. Bias dependence of total-dose effects in bulk FinFETs. IEEE Trans Nucl Sci, 60, 4476(2013).
[3]
[4] W T Chang, L G Cin, W K Yeh. Impact of fin width and back bias under hot carrier injection on double-gate FinFETs. IEEE Trans Device Mater Reliab, 15, 86(2015).
[5]
[6]
[7]
[8] X Y Tang, J W Lu, R Zhang et al. Positive bias temperature instability and hot carrier injection of back gate ultra-thin-body In0.53Ga0.47As-on-insulator n-channel metal–oxide–semiconductor field-effect transistor. Chin Phys Lett, 32, 117302(2015).
[9] M Silvestri, S Gerardin, A Paccagnella et al. Channel hot carrier stress on irradiated 130-nm NMOSFETs: Impact of bias conditions during X-ray exposure. 2007 9th European Conference on Radiation and Its Effects on Components and Systems, 1(2007).
[10] Q W Zheng, J W Cui, H Zhou et al. Hot-carrier effects on total dose irradiated 65 nm n-type metal–oxide–semiconductor field-effect transistors. Chin Phys Lett, 33, 076102(2016).
[11]
[12] N C Das, V Nathan, S Dacus et al. Combined effects of hot-carrier stressing and ionizing radiation in SiO2, NO, and ONO MOSFETs. IEEE Electron Device Lett, 14, 40(1993).
[13] L Yang, Q Z Zhang, Y B Huang et al. Total ionizing dose response and annealing behavior of bulk nFinFETs with ON-state bias irradiaiton. IEEE Trans Nucl Sci, 65, 1503(2018).
[14]
[15] H Zhang, H Jiang, X Fan et al. Effects of total-ionizing-dose irradiation on single-event response for flip-flop designs at 14-/16-nm bulk FinFET technology node. IEEE Trans Nucl Sci, 65, 1928(2018).
[16] M P King, X Wu, M Eller et al. Analysis of TID process, geometry, and bias condition dependence in 14-nm FinFETs and implications for RF and SRAM performance. IEEE Trans Nucl Sci, 64, 285(2017).
