[1] D J Frank. Power-constrained CMOS scaling limits. IBM J Res Dev, 46, 235(2002).

[2] R H Yan, A Ourmazd, K F Lee. Scaling the Si MOSFET: From bulk to SOI to bulk. IEEE Trans Electron Devices, 39, 1704(1992).

[3] C Hu. FinFET and UTB: How to make very short channel MOSFETs. ECS Trans, 50, 17(2013).

[4]

[5] K Uchida, H Watanabe, A Kinoshita et al. Experimental study on carrier transport mechanism in ultrathin-body SOI nand p-MOSFETs with SOI thickness less than 5 nm. Dig Int Electron Devices Meet, 47(2002).

[6] K Uchida, H Watanabe, J Koga et al. Experimental study on carrier transport mechanism in ultrathin-body SOI MOSFETs. International Conference on Simulation of Semiconductor Processes and Devices, 8(2003).

[7] D A Bandurin, A V Tyurnina, G L Yu et al. High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe. Nat Nanotechnol, 12, 223(2017).

[8] L K Li, Y J Yu, G Ye et al. Black phosphorus field-effect transistors. Nat Nanotechnol, 9, 372(2014).

[9] B Radisavljevic, A Radenovic, J Brivio et al. Single-layer MoS₂ transistors. Nat Nanotechnol, 6, 147(2011).

[10] F Schwierz, J Pezoldt, R Granzner. Two-dimensional materials and their prospects in transistor electronics. Nanoscale, 7, 8261(2015).

[11] L Tao, E Cinquanta, D Chiappe et al. Silicene field-effect transistors operating at room temperature. Nat Nanotechnol, 10, 227(2015).

[12] A Acun, B Poelsema, H J W Zandvliet et al. The instability of silicene on Ag(111). Appl Phys Lett, 103, 263119(2013).

[13] G Doornbos, M Passlack. Benchmarking of III–V n-MOSFET maturity and feasibility for future CMOS. IEEE Electron Device Lett, 31, 1110(2010).

[14] J A del Alamo, D A Antoniadis, J Q Lin et al. Nanometer-scale III-V MOSFETs. IEEE J Electron Devices Soc, 4, 205(2016).

[15] X Lü, S S He, H X Lian et al. Structural, electronic, and optical properties of pristine and bilayers of hexagonal III-V binary compounds and their hydrogenated counterparts. Appl Surf Sci, 531, 147262(2020).

[16] H Riel, L E Wernersson, M Hong et al. III-V compound semiconductor transistors — from planar to nanowire structures. MRS Bull, 39, 668(2014).

[17] B P Bahuguna, L K Saini, R O Sharma et al. Strain and electric field induced metallization in the GaX (X = N, P, As & Sb) monolayer. Physica E, 99, 236(2018).

[18] T Low, A S Rodin, A Carvalho et al. Tunable optical properties of multilayer black phosphorus thin films. Phys Rev B, 90, 075434(2014).

[19] M Brandbyge, J L Mozos, P Ordejón et al. Density-functional method for nonequilibrium electron transport. Phys Rev B, 65, 165401(2002).

[20] J M Soler, E Artacho, J D Gale et al. The SIESTA method for ab initio order-N materials simulation. J Phys: Condens Matter, 14, 2745(2002).

[21] H J Monkhorst, J D Pack. Special points for Brillouin-zone integrations. Phys Rev B, 13, 5188(1976).

[22] J P Perdew, K Burke, M Ernzerhof. Generalized gradient approximation made simple. Phys Rev Lett, 77, 3865(1996).

[23] H L Zhuang, A K Singh, R G Hennig. Computational discovery of single-layer III-V materials. Phys Rev B, 87, 165415(2013).

[24] X F Fan, W T Zheng, J L Kuo et al. Structural stability of single-layer MoS₂ under large strain. J Phys: Condens Matter, 27, 105401(2015).

[25] S S Lin. Light-emitting two-dimensional ultrathin silicon carbide. J Phys Chem C, 116, 3951(2012).

[26] A K Singh, H L Zhuang, R G Hennig. Ab initiosynthesis of single-layer III-V materials. Phys Rev B, 89, 245431(2014).

[27] F Schwierz. Graphene transistors. Nat Nanotechnol, 5, 487(2010).

[28] D M Riffe. Temperature dependence of silicon carrier effective masses with application to femtosecond reflectivity measurements. J Opt Soc Am B, 19, 1092(2002).

[29] D Yadav, D R Nair. Impact of source to drain tunneling on the ballistic performance of Si, Ge, GaSb, and GeSn nanowire p-MOSFETs. IEEE J Electron Devices Soc, 8, 308(2020).

[30] R G Quhe, X Y Peng, Y Y Pan et al. Can a black phosphorus Schottky barrier transistor be good enough. ACS Appl Mater Interfaces, 9, 3959(2017).

[31] X T Sun, L Xu, Y Zhang et al. Performance limit of monolayer WSe₂ transistors; significantly outperform their MoS₂ counterpart. ACS Appl Mater Interfaces, 12, 20633(2020).

[32] B Yu, L Chang, S Ahmed et al. FinFET scaling to 10 nm gate length. IEEE International Electron Devices Meeting, 251(2002).

[33] Z Y Ni, M Ye, J H Ma et al. Performance upper limit of sub-10 nm monolayer MoS₂ transistors. Adv Electron Mater, 2, 1600191(2016).

[34] B R Bennett, M G Ancona, J B Boos et al. Strained GaSb/AlAsSb quantum wells for p-channel field-effect transistors. J Cryst Growth, 311, 47(2008).

[35] B R Bennett, T F Chick, M G Ancona et al. Enhanced hole mobility and density in GaSb quantum wells. Solid State Electron, 79, 274(2013).

[36] Y W Chen, Z Tan, L F Zhao et al. Mobility enhancement of strained GaSb p-channel metal–oxide–semiconductor field-effect transistors with biaxial compressive strain. Chin Phys B, 25, 038504(2016).

[37] J A del Alamo. Nanometre-scale electronics with III-V compound semiconductors. Nature, 479, 317(2011).

[38] A Bansal, B C Paul, K Roy. Modeling and optimization of fringe capacitance of nanoscale DGMOS devices. IEEE Trans Electron Devices, 52, 256(2005).

[39] J Lacord, G Ghibaudo, F Boeuf. Comprehensive and accurate parasitic capacitance models for two- and three-dimensional CMOS device structures. IEEE Trans Electron Devices, 59, 1332(2012).

[40] L Wei, F Boeuf, T Skotnicki et al. Parasitic capacitances: Analytical models and impact on circuit-level performance. IEEE Trans Electron Devices, 58, 1361(2011).

[41] L Vicarelli, M S Vitiello, D Coquillat et al. Graphene field-effect transistors as room-temperature terahertz detectors. Nat Mater, 11, 865(2012).

[42] S Singh, K Thakar, N Kaushik et al. Performance projections for two-dimensional materials in radio-frequency applications. Phys Rev Appl, 10, 014022(2018).

[43] S Prasanna Kumar, P Sandeep, S Choudhary. Changes in transconductance (g_m) and I_on/I_off with high-K dielectrics in MX₂ monolayer 10 nm channel double gate n-MOSFET. Superlattices Microstruct, 111, 642(2017).