• Laser & Optoelectronics Progress
  • Vol. 54, Issue 12, 121202 (2017)
Sui Xiaole, Xiao Xia*, Qi Haiyang, and Kong Tao
Author Affiliations
  • [in Chinese]
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    DOI: 10.3788/lop54.121202 Cite this Article Set citation alerts
    Sui Xiaole, Xiao Xia, Qi Haiyang, Kong Tao. Influence of Residual Stress on Young Modulus Detection of SiO2 Bulk Materials by Laser-Induced Surface Ultrasonic Wave Technique[J]. Laser & Optoelectronics Progress, 2017, 54(12): 121202 Copy Citation Text show less

    Abstract

    With the introduction of the effective elastic constants including the residual stress in the ideal theoretical model, the half-infinite residual-stress theoretical calculation model of SiO2 is established. The influence of residual stress on the Young modulus detection of SiO2 bulk materials by the laser-induced surface ultrasonic wave technique is studied, and the error judgment basis is proposed. The results show that, when the residual compressive stress of SiO2 bulk materials is less than 900 MPa, the relative error is less than 5% and the influence of residual stress can be ignored. While when the residual compressive stress is more than 900 MPa, the error is more than 5%, and the influence of residual stress should be taken into account.
    Sui Xiaole, Xiao Xia, Qi Haiyang, Kong Tao. Influence of Residual Stress on Young Modulus Detection of SiO2 Bulk Materials by Laser-Induced Surface Ultrasonic Wave Technique[J]. Laser & Optoelectronics Progress, 2017, 54(12): 121202
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