• Journal of Infrared and Millimeter Waves
  • Vol. 39, Issue 4, 397 (2020)
Li-Jie LIU1, Yuan-Da WU2、*, Yue WANG1, Liang-Liang WANG1, Jun-Ming An2, and You-Wen ZHAO3
Author Affiliations
  • 1State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing00083,China
  • 2State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing00083,China
  • 3College of Material Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing100049,China
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    DOI: 10.11972/j.issn.1001-9014.2020.04.001 Cite this Article
    Li-Jie LIU, Yuan-Da WU, Yue WANG, Liang-Liang WANG, Jun-Ming An, You-Wen ZHAO. 1 550 nm VCSELs for long-reach optical interconnects[J]. Journal of Infrared and Millimeter Waves, 2020, 39(4): 397 Copy Citation Text show less

    Abstract

    Long-wavelength VCSELs on an InP substrate was designed and fabricated with an active layer of 1550 nm. The top Distributed Bragg Reflection (DBR) mirror system has been constructed by fabricating 4.5 pairs of SiO2/Si top DBRs. The threshold current was 20 mA and maximum output power around 7 μW under continuous wave (CW) operation at room temperature. More importantly, the lasing spectrum is 1554 nm and the full width at half maximum is 3 nm.
    Ith=Aajth=qVaηIτspnthqVaBηInt2exp2gth/g1()

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    Pout=ηeωqI-Ith()

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    VI=V0+IRs()

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    ηcI=PoutIV=ηeν/q(I-Ith)I(V0+IRs)()

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    ηmax=ηeνqV0ξ1+1+ξ2=ηeνqV0fcξ()

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    PmaxI0=ηeν/qIth1+ξ()

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    ηe=τpτp,mαmαi+αm=11-αiLeff/lnRtRb()

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    Li-Jie LIU, Yuan-Da WU, Yue WANG, Liang-Liang WANG, Jun-Ming An, You-Wen ZHAO. 1 550 nm VCSELs for long-reach optical interconnects[J]. Journal of Infrared and Millimeter Waves, 2020, 39(4): 397
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