Wei-Guo HUANG, Yi GU, Yu-Hang JIN, Bo-Wen LIU, Qian GONG, Hua HUANG, Shu-Min WANG, Ying-Jie MA, Yong-Gang ZHANG. InAs quantum wells grown on GaP/Si substrate with Ga(In,As)P metamorphic buffers[J]. Journal of Infrared and Millimeter Waves, 2022, 41(1): 2021021
- Journal of Infrared and Millimeter Waves
- Vol. 41, Issue 1, 2021021 (2022)
Fig. 1. Schematic structures of the InAs/In0.83Al0.17As quantum wells grown on GaxIn1-xP buffer and GaAsyP1-y buffer
Fig. 2. Lattice constants and band gaps of the InAs/In0.83Al0.17As quantum wells grown on GaxIn1-xP buffer（samples 1）and GaAsyP1-y buffer（samples 2）
Fig. 3. 20 × 20 µm2 AFM images of the InAs/In0.83Al0.17As quantum well structures：grown on（a）GaxIn1-xP buffer（samples 1）and（b）GaAsyP1-y buffer（samples 2）
Fig. 4. HRXRD（004）scanning curves（the black one）and simulated curves（the red one）of the InAs/In0.83Al0.17As quantum well structures grown on（a）GaxIn1-xP buffer（sample 1）and（b）GaAsyP1-y buffer（sample 2）
Fig. 5. Symmetric（004）and asymmetric（115）reciprocal space maps of the InAs/In0.83Al0.17As quantum well structures grown on（a）GaxIn1-xP buffer and（b）GaAsyP1-y buffer
Fig. 6. PL spectra of sample 1（on GaxIn1-xP buffer）and sample 2（on GaAsyP1-y buffer）
Fig. 7. Temperature-dependent PL intensity and FWHM of sample 1（on GaxIn1-xP buffer）and sample 2（on GaAsyP1-y buffer）
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