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Journal of Infrared and Millimeter Waves
Vol. 41, Issue 1, 2021021 (2022)

InAs quantum wells grown on GaP/Si substrate with Ga(In,As)P metamorphic buffers

Wei-Guo HUANG^1、4, Yi GU^{1、2、3、4、*}, Yu-Hang JIN^2、3, Bo-Wen LIU^2、3, Qian GONG¹, Hua HUANG¹, Shu-Min WANG⁵, Ying-Jie MA^1、2、3, and Yong-Gang ZHANG^1、2、3

Author Affiliations

¹Key Laboratory of Terahertz Technology，Shanghai Institute of Microsystem and Information Technology，Chinese Academy of Sciences，Shanghai 200050，China

²State Key Laboratory of Transducer Technology，Shanghai Institute of Technical Physics，Chinese Academy of Sciences，Shanghai 200083，China

³Key Laboratory of Infrared Imaging Materials and Detectors，Shanghai Institute of Technical Physics，Chinese Academy of Sciences，Shanghai 200083，China

⁴University of Chinese Academy of Science，Beijing 100049，China

⁵Department of Microtechnology and Nanoscience，Chalmers University of Technology，Gothenburg SE-41296，Sweden

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DOI: 10.11972/j.issn.1001-9014.2022.01.019 Cite this Article

Wei-Guo HUANG, Yi GU, Yu-Hang JIN, Bo-Wen LIU, Qian GONG, Hua HUANG, Shu-Min WANG, Ying-Jie MA, Yong-Gang ZHANG. InAs quantum wells grown on GaP/Si substrate with Ga(In,As)P metamorphic buffers[J]. Journal of Infrared and Millimeter Waves, 2022, 41(1): 2021021 Copy Citation Text

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References

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Wei-Guo HUANG, Yi GU, Yu-Hang JIN, Bo-Wen LIU, Qian GONG, Hua HUANG, Shu-Min WANG, Ying-Jie MA, Yong-Gang ZHANG. InAs quantum wells grown on GaP/Si substrate with Ga(In,As)P metamorphic buffers[J]. Journal of Infrared and Millimeter Waves, 2022, 41(1): 2021021

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