A new method fabricating Vanadium oxides thin films on Si 3N 4 substrates has been completed, and the temperature coefficient resistance of the thin film has been found to be -0.021K -1 at room temperature. Based on the method, 128 element linear uncooled infrared detector arrays are fabricated utilizing pattern and reactive ion etching process. Self supporting microbridge array has also been designed and fabricated to reduce the thermal conductance between the active area of detectors and the silicon substrate. Test indicates the responsivity and detectivity of detectors approaching 10 4V/W and 2×10 8cm Hz^1/2 W^-1 in 8～12μm IR radiation band, respectively.