[1] J Yoon, S Jo, I S Chun et al. GaAs photovoltaics and optoelectronics using releasable multilayer epitaxial assemblies. Nature, 465, 329(2010).
[2] P R C Kent, L W Hart Gus, A Zunger. Biaxial strain-modified valence and conduction band offsets of zinc-blende GaN, GaP, GaAs, InN, InP, and InAs, and optical bowing of strained epitaxial InGaN alloys. Appl Phys Lett, 81, 4377(2002).
[3] E Monroy, E Munoz, F J Sanchez et al. High-performance GaN p–n junction photodetectors for solar ultraviolet applications. Semicond Sci Technol, 13, 1042(1998).
[4] T R Paudel, W R L Lambrecht. First-principles calculations of elasticity, polarization-related properties, and nonlinear optical coefficients in Zn–IV–N2 compounds. Phys Rev B, 79, 245205(2009).
[5] A Punya, W R L Lambrecht, M Schilfgaarde. Quasiparticle band structure of Zn–IV–N2 compounds. Phys Rev B, 84, 165204(2011).
[6] J Ma, H X Deng, J W Luo et al. Origin of the failed ensemble average rule for the band gaps of disordered nonisovalent semiconductor alloys. Phys Rev B, 90, 115201(2014).
[7] K Du, C Bekele, C C Hayman et al. Synthesis and characterization of ZnGeN2 grown from elemental Zn and Ge sources. J Cryst Growth, 310, 1057(2008).
[8] Q Clément, J Melkonian, J Barrientos-Barria et al. Tunable optical parametric amplification of a single-frequency quantum cascade laser around 8μm in ZnGeP2. Opt Lett, 38, 4046(2013).
[9] P Narang, S Chen, N C Coronel et al. Bandgap tunability in Zn(Sn, Ge)N2 semiconductor alloys. Adv Mater, 26, 1235(2014).
[10] S R Zhang, L H Xie, S D Ouyang et al. Electronic structure, chemical bonding and optical properties of the nonlinear optical crystal ZnGeP2 by first-principles calculations. Phys Scri, 91, 015801(2016).
[11] S P Kowalczyk, J T Cheung, E A Kraut et al. CdTe-HgTe (-1, -1, -1) heterojunction valence-band discontinuity: A common-anion-rule contradiction. Phys Rev Lett, 56, 1605(1986).
[12] H X Deng, J W Luo, S H Wei. Chemical trends of stability and band alignment of lattice-matched II–VI/III–V semiconductor interfaces. Phys Rev B, 91, 075315(2015).
[13] P Hohenberg, W Kohn. Inhomogeneous electron gas. Phys Rev, 136, 864(1964).
[14] W Kohn, L J Sham. Self-consistent equations including exchange and correlation effects. Phys Rev, 140, 1133(1965).
[15] J Heyd, G E Scuseria, M Ernzerhof. Hybrid functionals based on a screened Coulomb potential. J Chem Phys, 118, 8207(2003).
[16] G Kresse, J Furthmuller. Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set. Compute Mater Sci, 6, 15(1996).
[17] G Kresse, J Furthmüller. Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set. Phys Rev B, 54, 11169(1996).
[18] A Wadehra, J W Nicklas, J W Wilkins. Band offsets of semiconductor heterostructures: A hybrid density functional study. Appl Phys Lett, 97, 092119(2010).
[19] P E Blöchl. Projector augmented wave method. Phys Rev B, 50, 17953(1994).
[20] I Vurgaftman, J Meyer, L Ram-Mohan. Band parameters for III–V compound semiconductors and their alloys. J Appl Phys, 89, 5815(2001).
[21] M R Lorenz, G D Pettit, R C Taylor. Band gap of gallium phosphide from 0 to 900 °K and light emission from diodes at high temperatures. Phys Rev, 171, 876(1986).
[22] S Ullah, G Murtaza, R Khenata et al. Towards from indirect to direct band gap and optical properties of XYP2 (X = Zn, Cd; Y = Si, Ge, Sn). Physica B, 441, 94(2014).
[23] G S Solomon, M L Timmons, J B Posthill. Organometallic vapor-phase-epitaxial growth and characterization of ZnGeAs2 on GaAs. J Appl Phys, 65, 1952(1989).
[24] S H Wei, A Zunger. Calculated natural band offsets of all II–VI and III–V semiconductors: Chemical trends and the role of cation d orbitals. Appl Phys Lett, 72, 2011(1998).
[25] S H Wei, A Zunger. Role of d orbitals in valence-band offsets of common-anion semiconductors. Phys Rev Lett, 59, 144(1987).
[26] S H Wei, A Zunger. Role of metal d states in II–VI semiconductors. Phys Rev B, 37, 8958(1988).