• Laser & Optoelectronics Progress
  • Vol. 58, Issue 21, 2123001 (2021)
Yongbing Zhao* and Chenchen Qian
Author Affiliations
  • School of Physics and Electronics, Yancheng Teachers University, Yancheng , Jiangsu 224007, China
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    DOI: 10.3788/LOP202158.2123001 Cite this Article Set citation alerts
    Yongbing Zhao, Chenchen Qian. Effect of Carrier Recombination Mechanism on Modulation Bandwidth of InGaN-Based LEDs with Different Emission Wavelengths[J]. Laser & Optoelectronics Progress, 2021, 58(21): 2123001 Copy Citation Text show less
    References

    [1] Liu S B, Wang G X, Wu X M et al. Electro-static failure evolution of GaN-based LED thin film chip with Ag mirrors[J]. Acta Optica Sinica, 40, 1023001(2020).

    [2] Tian H J, Hu Y, Chen T et al. Spectral optimization of a mixed white light-emitting diode (LED) cluster comprising a red/green/blue/cyan/yellow/warm white LED[J]. Acta Optica Sinica, 40, 0823001(2020).

    [3] Chao P F, Xu Y C, Liu C H et al. Optimization and preparation of GaN-based LED chip electrode structure[J]. Laser & Optoelectronics Progress, 57, 072301(2020).

    [4] Komine T, Nakagawa M. Fundamental analysis for visible-light communication system using LED lights[J]. IEEE Transactions on Consumer Electronics, 50, 100-107(2004).

    [5] Liu Y S, Smith D A. The frequency response of an amplitude-modulated GaAs luminescence diode[J]. Proceedings of the IEEE, 63, 542-544(1975).

    [6] Li H J, Li P P, Kang J J et al. Analysis model for efficiency droop of InGaN light-emitting diodes based on reduced effective volume of active region by carrier localization[J]. Applied Physics Express, 6, 092101(2013).

    [7] Li P P, Zhao Y B, Yi X Y et al. Effects of a reduced effective active region volume on wavelength-dependent efficiency droop of InGaN-based light-emitting diodes[J]. Applied Sciences, 8, 2138(2018).

    [8] Zhao Y B, Li P P. Toward ultra-low efficiency droop in C-plane polar InGaN light-emitting diodes by reducing carrier density with a wide InGaN last quantum well[J]. Applied Sciences, 9, 3004(2019).

    [9] Karpov S. ABC-model for interpretation of internal quantum efficiency and its droop in III-nitride LEDs: a review[J]. Optical and Quantum Electronics, 47, 1293-1303(2015).

    [10] Verzellesi G, Saguatti D, Meneghini M et al. Efficiency droop in InGaN/GaN blue light-emitting diodes: physical mechanisms and remedies[J]. Journal of Applied Physics, 114, 071101(2013).

    [11] Zhan S Z. High frequency modulation characteristics of GaAs-GaAlAs DH LEDs for optical fiber communication[J]. Chinese Journal of Lasers, 11, 283-289(1984).

    [12] Yang J, Zhu S X, Yan J C et al. Effect of carrier recombination mechanism on modulation bandwidth of InGaN multiple-quantum-wells blue light emitting diodes[J]. Chinese Journal of Luminescence, 39, 202-207(2018).

    [13] Dai Q, Shan Q F, Wang J et al. Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes[J]. Applied Physics Letters, 97, 133507(2010).

    [14] Watson-Parris D, Godfrey M J, Dawson P et al. Carrier localization mechanisms in InxGa1–xN/GaN quantum wells[J]. Physical Review B, 83, 115321(2011).

    Yongbing Zhao, Chenchen Qian. Effect of Carrier Recombination Mechanism on Modulation Bandwidth of InGaN-Based LEDs with Different Emission Wavelengths[J]. Laser & Optoelectronics Progress, 2021, 58(21): 2123001
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