Researching | Effect of Carrier Recombination Mechanism on Modulation Bandwidth of InGaN-Based LEDs with Different Emission Wavelengths

Journals >Laser & Optoelectronics Progress >Volume 58 >Issue 21 >Page 2123001 > Article

Laser & Optoelectronics Progress
Vol. 58, Issue 21, 2123001 (2021)

Effect of Carrier Recombination Mechanism on Modulation Bandwidth of InGaN-Based LEDs with Different Emission Wavelengths

Yongbing Zhao^* and Chenchen Qian

Author Affiliations

School of Physics and Electronics, Yancheng Teachers University, Yancheng , Jiangsu 224007, China

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DOI: 10.3788/LOP202158.2123001 Cite this Article Set citation alerts

Yongbing Zhao, Chenchen Qian. Effect of Carrier Recombination Mechanism on Modulation Bandwidth of InGaN-Based LEDs with Different Emission Wavelengths[J]. Laser & Optoelectronics Progress, 2021, 58(21): 2123001 Copy Citation Text

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Yongbing Zhao, Chenchen Qian. Effect of Carrier Recombination Mechanism on Modulation Bandwidth of InGaN-Based LEDs with Different Emission Wavelengths[J]. Laser & Optoelectronics Progress, 2021, 58(21): 2123001

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