Yongbing Zhao, Chenchen Qian. Effect of Carrier Recombination Mechanism on Modulation Bandwidth of InGaN-Based LEDs with Different Emission Wavelengths[J]. Laser & Optoelectronics Progress, 2021, 58(21): 2123001
- Laser & Optoelectronics Progress
- Vol. 58, Issue 21, 2123001 (2021)
Fig. 1. Relationship between 3 dB modulation bandwidth and injection current of LEDs with different luminous wavelengths under different effective active area thicknesses thickness. (a) 400 nm; (b) 455 nm; (c) 525 nm
Fig. 2. Relationship between 3 dB modulation bandwidth and injection current of LEDs with different luminous wavelengths under different thickness of active region of quantum well layer. (a) 400 nm; (b) 455 nm; (c) 525 nm
Fig. 3. Relationship between current and 3 dB modulation bandwidth of LED with different emitting wavelengths
Fig. 4. Relationship between 3 dB modulation bandwidth of LED and In component under different current densities
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Table 1. ABC model parameters of LED at different wavelengths[7]
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