• Journal of Infrared and Millimeter Waves
  • Vol. 41, Issue 1, 2022001 (2022)
Xue LI1、2、*, Hai-Mei GONG1、2、**, Xiu-Mei SHAO1、2, Tao LI1、2, Song-Lei HUANG1、2, Ying-Jie MA1、2, Bo YANG1、2, Xian-Liang ZHU1、2, Yi GU1、2, and Jia-Xiong FANG1、2
Author Affiliations
  • 1State Key Laboratories of Transducer Technology,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China
  • 2Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China
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    DOI: 10.11972/j.issn.1001-9014.2022.01.009 Cite this Article
    Xue LI, Hai-Mei GONG, Xiu-Mei SHAO, Tao LI, Song-Lei HUANG, Ying-Jie MA, Bo YANG, Xian-Liang ZHU, Yi GU, Jia-Xiong FANG. Recent advances in short wavelength infrared InGaAs focal plane arrays[J]. Journal of Infrared and Millimeter Waves, 2022, 41(1): 2022001 Copy Citation Text show less
    The development roadmap of the 1.0~1.7 μm InGaAs FPA detectors in SITP
    Fig. 1. The development roadmap of the 1.0~1.7 μm InGaAs FPA detectors in SITP
    The photographs of the 2580×2048 InGaAs FPA detector assembly in SITP
    Fig. 2. The photographs of the 2580×2048 InGaAs FPA detector assembly in SITP
    The imaging demonstration of the SWIR InGaAs FPA under heavy fog (uncorrected raw image, 2021.4.8, Taian in Shandong)(a) visible image,(b) SWIR image, distance 1.8 km, (c) SWIR image, distance 9.9 km
    Fig. 3. The imaging demonstration of the SWIR InGaAs FPA under heavy fog (uncorrected raw image, 2021.4.8, Taian in Shandong)(a) visible image,(b) SWIR image, distance 1.8 km, (c) SWIR image, distance 9.9 km
    The surface morphologies of the FPA during different processing stages:(a)after polishing of the InP substrate,(b)after ICP etching of the thinnest InP layer,(c)the spectral quantum efficiencies vs substrate thinkness
    Fig. 4. The surface morphologies of the FPA during different processing stages:(a)after polishing of the InP substrate,(b)after ICP etching of the thinnest InP layer,(c)the spectral quantum efficiencies vs substrate thinkness
    The three-dimensional schematic illustration of the InGaAs FPA surfaces integrated with different periodic MIE scatting structures:(a)InP nanosphere,(b)InP nanopillar,(c)the simulated spectral reflectivities of different structures
    Fig. 5. The three-dimensional schematic illustration of the InGaAs FPA surfaces integrated with different periodic MIE scatting structures:(a)InP nanosphere,(b)InP nanopillar,(c)the simulated spectral reflectivities of different structures
    The processing flow of the self-assembled colloidal nanosphere masks:(a)-(f),(g)the enhanced spectral quantum efficiency of the visible-extended 320×256 InGaA FPA integrated with the artificial InP surface nanostructures
    Fig. 6. The processing flow of the self-assembled colloidal nanosphere masks:(a)-(f),(g)the enhanced spectral quantum efficiency of the visible-extended 320×256 InGaA FPA integrated with the artificial InP surface nanostructures
    (a)The scanning microscope image of the micro-mesa arrays for the 15-µm-pitch FPA,(b)a finished 3-inch FPA wafer,(c)measured temperature-dependent dark current versus reverse bias
    Fig. 7. (a)The scanning microscope image of the micro-mesa arrays for the 15-µm-pitch FPA,(b)a finished 3-inch FPA wafer,(c)measured temperature-dependent dark current versus reverse bias
    (a)Response range of a 1280×1024 InGaAs FPA,(b)the statistical distribution of the blackbody response signal
    Fig. 8. (a)Response range of a 1280×1024 InGaAs FPA,(b)the statistical distribution of the blackbody response signal
    The development roadmap of the monolithic polarized InGaAs FPA detectors in SITP
    Fig. 9. The development roadmap of the monolithic polarized InGaAs FPA detectors in SITP
    An imaging comparison between the monolithic polarized 160×128 InGaAs SWIR FPA and a non-polarized FPA
    Fig. 10. An imaging comparison between the monolithic polarized 160×128 InGaAs SWIR FPA and a non-polarized FPA
    The measured reverse dark and light IV curves for the Geiger-mode InGaAsP/InP avalanche photodiode
    Fig. 11. The measured reverse dark and light IV curves for the Geiger-mode InGaAsP/InP avalanche photodiode
    A 64×64 Geiger-mode InGaAsP/InP avalanche FPA assembly and an electronics module
    Fig. 12. A 64×64 Geiger-mode InGaAsP/InP avalanche FPA assembly and an electronics module
    Timing histogram measurements for light waves with a deferred arrival time of 0.8 ns
    Fig. 13. Timing histogram measurements for light waves with a deferred arrival time of 0.8 ns
    Xue LI, Hai-Mei GONG, Xiu-Mei SHAO, Tao LI, Song-Lei HUANG, Ying-Jie MA, Bo YANG, Xian-Liang ZHU, Yi GU, Jia-Xiong FANG. Recent advances in short wavelength infrared InGaAs focal plane arrays[J]. Journal of Infrared and Millimeter Waves, 2022, 41(1): 2022001
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