Fig. 1. The development roadmap of the 1.0~1.7 μm InGaAs FPA detectors in SITP
Fig. 2. The photographs of the 2580×2048 InGaAs FPA detector assembly in SITP
Fig. 3. The imaging demonstration of the SWIR InGaAs FPA under heavy fog (uncorrected raw image, 2021.4.8, Taian in Shandong)(a) visible image,(b) SWIR image, distance 1.8 km, (c) SWIR image, distance 9.9 km
Fig. 4. The surface morphologies of the FPA during different processing stages:(a)after polishing of the InP substrate,(b)after ICP etching of the thinnest InP layer,(c)the spectral quantum efficiencies vs substrate thinkness
Fig. 5. The three-dimensional schematic illustration of the InGaAs FPA surfaces integrated with different periodic MIE scatting structures:(a)InP nanosphere,(b)InP nanopillar,(c)the simulated spectral reflectivities of different structures
Fig. 6. The processing flow of the self-assembled colloidal nanosphere masks:(a)-(f),(g)the enhanced spectral quantum efficiency of the visible-extended 320×256 InGaA FPA integrated with the artificial InP surface nanostructures
Fig. 7. (a)The scanning microscope image of the micro-mesa arrays for the 15-µm-pitch FPA,(b)a finished 3-inch FPA wafer,(c)measured temperature-dependent dark current versus reverse bias
Fig. 8. (a)Response range of a 1280×1024 InGaAs FPA,(b)the statistical distribution of the blackbody response signal
Fig. 9. The development roadmap of the monolithic polarized InGaAs FPA detectors in SITP
Fig. 10. An imaging comparison between the monolithic polarized 160×128 InGaAs SWIR FPA and a non-polarized FPA
Fig. 11. The measured reverse dark and light IV curves for the Geiger-mode InGaAsP/InP avalanche photodiode
Fig. 12. A 64×64 Geiger-mode InGaAsP/InP avalanche FPA assembly and an electronics module
Fig. 13. Timing histogram measurements for light waves with a deferred arrival time of 0.8 ns