Hang Dong, Huiwen Xue, Qiming He, Yuan Qin, Guangzhong Jian, Shibing Long, Ming Liu. Progress of power field effect transistor based on ultra-wide bandgap Ga2O3 semiconductor material[J]. Journal of Semiconductors, 2019, 40(1): 011802
- Journal of Semiconductors
- Vol. 40, Issue 1, 011802 (2019)
![(Color online) Transformation relationships among Ga2O3 in different crystalline phases and their hydrates[21].](/richHtml/jos/2019/40/1/011802/img_1.jpg)
Fig. 1. (Color online) Transformation relationships among Ga2O3 in different crystalline phases and their hydrates[21 ].
![(Color online) Crystal structure of β-Ga2O3[32].](/richHtml/jos/2019/40/1/011802/img_2.jpg)
Fig. 2. (Color online) Crystal structure of β -Ga2O3[32 ].
Fig. 3. (Color online) The development of β -Ga2O3 transistor in recent years.
Fig. 4. (Color online) Schematic cross-section of β -Ga2O3 (a) MESFET[12 ] and (b) MOSFET[11 ].
Fig. 5. (Color online) (a) Schematic cross-section, (b) the off-state drain/gate leakage and breakdown curves, (c) temperature-dependent transfer characteristics at V ds = 30 V, and (d) DC and pulsed output curves of the β -Ga2O3 FP-MOSFET[16 ].
Fig. 6. Top–down SEM image of the two-finger MOSFET on (100) β -Ga2O3[55 ].
Fig. 7. (Color online) (a) SEM false-colored cross-section view of recessed-gate MOSFETs and HR-TEM of (b) its sidewall and (c) bottom facets of the gate-recess contact, (d) its gate-source and drain-source breakdown curves of both source-drain distances[15 ].
Fig. 8. (Color online) (a) Schematic cross-section and SEM image, and (b) three-terminal off-state breakdown curves of vertical β -Ga2O3 Fin-MISFET[14 ].
Fig. 9. (Color online) (a) Cross section schematic, (b) focused ion beam (FIB) cross sectional image, and (c) extrinsic small signal RF gain performance of RF β -Ga2O3 MOSFET[59 ].
Fig. 10. (Color online) (a) Schematic and (b) density-dependent field effect mobility of Silicon delta-doped β -Ga2O3 MESFET.
Fig. 11. (Color online) Depletion/enhancement-mode β -Ga2O3 on insulator (GOOI) FETs[17 ].
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Table 1. Comparison of the physical properties of Si, GaN, SiC and β -Ga2O3 semiconductor[6 ].
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Table 2. Development of Ga2O3 FETs and the corresponding performances.
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