Continuous-wave operation of 405 nm distributed Bragg reflector laser diodes based on GaN using 10th-order surface gratings

J. H. Kang; H. Wenzel; E. Freier; V. Hoffmann; J. Fricke; O. Brox; M. Matalla; S. Einfeldt

doi:10.1364/PRJ.444947

Journals >Photonics Research >Volume 10 >Issue 5 >Page 1157 > Article

Photonics Research
Vol. 10, Issue 5, 1157 (2022)

Continuous-wave operation of 405 nm distributed Bragg reflector laser diodes based on GaN using 10th-order surface gratings

J. H. Kang^*, H. Wenzel, E. Freier, V. Hoffmann, J. Fricke, O. Brox, M. Matalla, and S. Einfeldt

Author Affiliations

Ferdinand-Braun-Institut gGmbH, Leibniz-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany

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DOI: 10.1364/PRJ.444947 Cite this Article Set citation alerts

J. H. Kang, H. Wenzel, E. Freier, V. Hoffmann, J. Fricke, O. Brox, M. Matalla, S. Einfeldt. Continuous-wave operation of 405 nm distributed Bragg reflector laser diodes based on GaN using 10th-order surface gratings[J]. Photonics Research, 2022, 10(5): 1157 Copy Citation Text

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(a) Reflection spectrum for α=30 cm−1, (b) maximum reflectivity, (c) loss, and (d) transmission of 10th-order DBR sections with V-shaped grooves (assuming a laterally infinite grating) as a function of the length of the DBR section for different values of an additional modal absorption α.

Fig. 1. (a) Reflection spectrum for α=30 cm−1, (b) maximum reflectivity, (c) loss, and (d) transmission of 10th-order DBR sections with V-shaped grooves (assuming a laterally infinite grating) as a function of the length of the DBR section for different values of an additional modal absorption α.

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(a) Schematic side view of a DBR laser diode consisting of a gain section and a DBR section; top-view scanning electron microscope images of (b) the DBR laser chip before the SiO2 deposition and (c) the 10th-order surface gratings with V-shaped grooves.

Fig. 2. (a) Schematic side view of a DBR laser diode consisting of a gain section and a DBR section; top-view scanning electron microscope images of (b) the DBR laser chip before the SiO2 deposition and (c) the 10th-order surface gratings with V-shaped grooves.

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Fig. 3. Optical power-current-voltage characteristics of DBR laser diodes with LDBR of 50, 100, and 200 μm for emission from (a) the front facet and (b) the rear facet.

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Fig. 4. (a) Output power-current characteristic and (b) 2D colormap of emission spectra at different currents of a DBR laser diode with LDBR of 200 μm measured at the front facet. Inset: high-resolution emission spectra of the DBR laser diode at 105 mA.

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Fig. 5. Temperature dependence of the peak emission wavelength of a DBR laser diode with LDBR of 200 μm operated at 100 mA.

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