Kai-Hao CHEN, Zhi-Cheng XU, Zhao-Ming LIANG, Yi-Hong ZHU, Jian-Xin CHEN, Li HE. Molecular beam epitaxy growth and characteristics of the high quantum efficiency InAs/GaSb type-II superlattices MWIR detector[J]. Journal of Infrared and Millimeter Waves, 2021, 40(3): 285
- Journal of Infrared and Millimeter Waves
- Vol. 40, Issue 3, 285 (2021)
Fig. 1. Eight measurement locations on the 3 inch MWIR detector wafer for uniformity characterization
Fig. 2. The schematic cross section profile of the MWIR detector structure
Fig. 3. The HRXRD ω-2θ scanning curves of eight points along the wafer radius
Fig. 4. Uniformity results of the（a）lattice mismatch、（b）FWHM and（c）periodic thickness of the MWIR detector along the wafer radius
Fig. 5. The 5 μm × 5 μm AFM images of eight locations along the wafer radius
Fig. 6. The RMS roughness values of the MWIR detector along the wafer radius
Fig. 7. The quantum efficiency spectrum of the P-I-N MWIR detector at 77 K
Fig. 8. The measured（solid line） and fitted（scatter line） dark current density-bias voltage（J-V） curves and dynamic resistance-area product（RA） and voltage（V） curve from a 100 μm×100 μm device
Fig. 9. The Johnson noise limited detectivity of the T2SLs MWIR detector at 77 K
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