Researching

Journals
  • Advanced Photonics
  • Photonics Insights
  • Advanced Photonics Nexus
  • Photonics Research
  • Advanced Imaging
  • View All Journals
  • Chinese Optics Letters
  • High Power Laser Science and Engineering
    • Articles
  • Optics
  • Physics
  • Geography
  • View All Subjects
    • Conferences
  • CIOP
  • HPLSE
  • AP
  • View All Events
    • News
    About CLP
    Search by keywords or author
    Journals >Photonics Research >Volume 8 >Issue 3 >Page 331 > Article
    • Photonics Research
    • Vol. 8, Issue 3, 331 (2020)
    High-efficiency AlGaN/GaN/AlGaN tunnel junction ultraviolet light-emitting diodes | EIC Choice Award
    A. Pandey1, W. J. Shin1, J. Gim2, R. Hovden2, and Z. Mi1、*
    Author Affiliations
  • 1Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, USA
  • 2Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, USA
    • show less
    DOI: 10.1364/PRJ.383652 Cite this Article Set citation alerts
    A. Pandey, W. J. Shin, J. Gim, R. Hovden, Z. Mi. High-efficiency AlGaN/GaN/AlGaN tunnel junction ultraviolet light-emitting diodes[J]. Photonics Research, 2020, 8(3): 331 Copy Citation Text show less
    References

    [1] World Health. Guidelines approved by the Guidelines Review Committee. Global Guidelines for the Prevention of Surgical Site Infection(2018).

    [2] World Health. Guidelines approved by the Guidelines Review Committee. Guidelines for Drinking-Water Quality(2017).

    [3] J. Shakya, K. Knabe, K. Kim, J. Li, J. Lin, H. Jiang. Polarization of III-nitride blue and ultraviolet light-emitting diodes. Appl. Phys. Lett., 86, 091107(2005).

    [4] P. Zhao, L. Han, M. R. McGoogan, H. Zhao. Analysis of TM mode light extraction efficiency enhancement for deep ultraviolet AlGaN quantum wells light-emitting diodes with III-nitride micro-domes. Opt. Mater. Express, 2, 1397-1406(2012).

    [5] M. Guttmann, F. Mehnke, B. Belde, F. Wolf, C. Reich, L. Sulmoni, T. Wernicke, M. Kneissl. Optical light polarization and light extraction efficiency of AlGaN-based LEDs emitting between 264 and 220 nm. Jpn. J. Appl. Phys., 58, SCCB20(2019).

    [6] J. Northrup, C. Chua, Z. Yang, T. Wunderer, M. Kneissl, N. Johnson, T. Kolbe. Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells. Appl. Phys. Lett., 100, 021101(2012).

    [7] K. Ban, J.-I. Yamamoto, K. Takeda, K. Ide, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, H. Amano. Internal quantum efficiency of whole-composition-range AlGaN multiquantum wells. Appl. Phys. Lett., 4, 052101(2011).

    [8] H. Hirayama, S. Fujikawa, N. Noguchi, J. Norimatsu, T. Takano, K. Tsubaki, N. Kamata. 222–282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire. Phys. Status Solidi A, 206, 1176-1182(2009).

    [9] M. Nakarmi, N. Nepal, C. Ugolini, T. Altahtamouni, J. Lin, H. Jiang. Correlation between optical and electrical properties of Mg-doped AlN epilayers. Appl. Phys. Lett., 89, 152120(2006).

    [10] Y. Taniyasu, M. Kasu, T. Makimoto. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres. Nature, 441, 325-328(2006).

    [11] C. Stampfl, C. Van de Walle. Theoretical investigation of native defects, impurities, and complexes in aluminum nitride. Phys. Rev. B, 65, 155212(2002).

    [12] V. Mymrin, K. Bulashevich, N. Podolskaya, S. Y. Karpov. Bandgap engineering of electronic and optoelectronic devices on native AlN and GaN substrates: a modelling insight. J. Cryst. Growth, 281, 115-124(2005).

    [13] M. S. Shur, R. Gaska. Deep-ultraviolet light-emitting diodes. IEEE Trans. Electron Devices, 57, 12-25(2009).

    [14] Y. Kashima, N. Maeda, E. Matsuura, M. Jo, T. Iwai, T. Morita, M. Kokubo, T. Tashiro, R. Kamimura, Y. Osada, H. Takagi, H. Hirayama. High external quantum efficiency (10%) AlGaN-based deep-ultraviolet light-emitting diodes achieved by using highly reflective photonic crystal on p-AlGaN contact layer. Appl. Phys. Lett., 11, 012101(2018).

    [15] M. Djavid, Z. Mi. Enhancing the light extraction efficiency of AlGaN deep ultraviolet light emitting diodes by using nanowire structures. Appl. Phys. Lett., 108, 051102(2016).

    [16] X. Liu, K. Mashooq, T. Szkopek, Z. Mi. Improving the efficiency of transverse magnetic polarized emission from AlGaN based LEDs by using nanowire photonic crystal. IEEE Photon. J., 10, 4501211(2018).

    [17] S. Zhao, H. P. Nguyen, M. G. Kibria, Z. Mi. III-Nitride nanowire optoelectronics. Progr. Quantum Electron., 44, 14-68(2015).

    [18] P. Dong, J. Yan, J. Wang, Y. Zhang, C. Geng, T. Wei, P. Cong, Y. Zhang, J. Zeng, Y. Tian, L. Sun, Q. Yan, J. Li, S. Fan, Z. Qin. 282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates. Appl. Phys. Lett., 102, 241113(2013).

    [19] H. Hirayama, T. Yatabe, N. Noguchi, T. Ohashi, N. Kamata. 231–261 nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire. Appl. Phys. Lett., 91, 071901(2007).

    [20] N. Susilo, S. Hagedorn, D. Jaeger, H. Miyake, U. Zeimer, C. Reich, B. Neuschulz, L. Sulmoni, M. Guttmann, F. Mehnke, C. Kuhn, T. Wernicke, M. Weyers, M. Kneissl. AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/sapphire. Appl. Phys. Lett., 112, 041110(2018).

    [21] J. Zhang, X. Hu, Y. Bilenko, J. Deng, A. Lunev, M. Shur, R. Gaska, M. Shatalov, J. Yang, M. A. Khan. AlGaN-based 280 nm light-emitting diodes with continuous-wave power exceeding 1 mW at 25 mA. Appl. Phys. Lett., 85, 5532-5534(2004).

    [22] T. Takano, T. Mino, J. Sakai, N. Noguchi, K. Tsubaki, H. Hirayama. Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency. Appl. Phys. Lett., 10, 031002(2017).

    [23] S. Vilhunen, H. Särkkä, M. Sillanpää. Ultraviolet light-emitting diodes in water disinfection. Environ. Sci. Pollut. Res., 16, 439-442(2009).

    [24] S.-I. Inoue, T. Naoki, T. Kinoshita, T. Obata, H. Yanagi. Light extraction enhancement of 265 nm deep-ultraviolet light-emitting diodes with over 90 mW output power via an AlN hybrid nanostructure. Appl. Phys. Lett., 106, 131104(2015).

    [25] S.-I. Inoue, N. Tamari, M. Taniguchi. 150 mW deep-ultraviolet light-emitting diodes with large-area AlN nanophotonic light-extraction structure emitting at 265 nm. Appl. Phys. Lett., 110, 141106(2017).

    [26] G.-D. Hao, N. Tamari, T. Obata, T. Kinoshita, S.-I. Inoue. Electrical determination of current injection and internal quantum efficiencies in AlGaN-based deep-ultraviolet light-emitting diodes. Opt. Express, 25, A639-A648(2017).

    [27] Y. Liao, C. Kao, C. Thomidis, A. Moldawer, J. Woodward, D. Bhattarai, T. Moustakas. Recent progress of efficient deep UV-LEDs by plasma-assisted molecular beam epitaxy. Phys. Status Solidi C, 9, 798-801(2012).

    [28] G.-B. Lin, D. Meyaard, J. Cho, E. Fred Schubert, H. Shim, C. Sone. Analytic model for the efficiency droop in semiconductors with asymmetric carrier-transport properties based on drift-induced reduction of injection efficiency. Appl. Phys. Lett., 100, 161106(2012).

    [29] H. Hirayama, Y. Tsukada, T. Maeda, N. Kamata. Marked enhancement in the efficiency of deep-ultraviolet AlGaN light-emitting diodes by using a multiquantum-barrier electron blocking layer. Appl. Phys. Lett., 3, 031002(2010).

    [30] J. Zhang, Y. Zhu, T. Egawa, S. Sumiya, M. Miyoshi, M. Tanaka. Influence of pulse width on electroluminescence and junction temperature of AlInGaN deep ultraviolet light-emitting diodes. Appl. Phys. Lett., 92, 191917(2008).

    [31] A. Chitnis, J. Sun, V. Mandavilli, R. Pachipulusu, S. Wu, M. Gaevski, V. Adivarahan, J. Zhang, M. A. Khan, A. Sarua, M. Kuball. Self-heating effects at high pump currents in deep ultraviolet light-emitting diodes at 324 nm. Appl. Phys. Lett., 81, 3491-3493(2002).

    [32] J. Yun, J.-I. Shim, H. Hirayama. Analysis of efficiency droop in 280-nm AlGaN multiple-quantum-well light-emitting diodes based on carrier rate equation. Appl. Phys. Lett., 8, 022104(2015).

    [33] W. Sun, M. Shatalov, J. Deng, X. Hu, J. Yang, A. Lunev, Y. Bilenko, M. Shur, R. Gaska. Efficiency droop in 245–247 nm AlGaN light-emitting diodes with continuous wave 2 mW output power. Appl. Phys. Lett., 96, 061102(2010).

    [34] H. Hirayama, N. Maeda, S. Fujikawa, S. Toyoda, N. Kamata. Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes. Jpn. J. Appl. Phys., 53, 100209(2014).

    [35] N. Maeda, M. Jo, H. Hirayama. Improving the efficiency of AlGaN deep-UV LEDs by using highly reflective Ni/Al p-type electrodes. Phys. Status Solidi A, 215, 1700435(2018).

    [36] Y. Zhang, Z. Jamal-Eddine, F. Akyol, S. Bajaj, J. M. Johnson, G. Calderon, A. A. Allerman, M. W. Moseley, A. M. Armstrong, J. Hwang, S. Rajan. Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency. Appl. Phys. Lett., 112, 071107(2018).

    [37] Y. Zhang, S. Krishnamoorthy, F. Akyol, J. M. Johnson, A. A. Allerman, M. W. Moseley, A. M. Armstrong, J. Hwang, S. Rajan. Reflective metal/semiconductor tunnel junctions for hole injection in AlGaN UV LEDs. Appl. Phys. Lett., 111, 051104(2017).

    [38] F. Akyol, S. Krishnamoorthy, Y. Zhang, J. Johnson, J. Hwang, S. Rajan. Low-resistance GaN tunnel homojunctions with 150 kA/cm2 current and repeatable negative differential resistance. Appl. Phys. Lett., 108, 131103(2016).

    [39] E. A. Clinton, E. Vadiee, S.-C. Shen, K. Mehta, P. D. Yoder, W. A. Doolittle. Negative differential resistance in GaN homojunction tunnel diodes and low voltage loss tunnel contacts. Appl. Phys. Lett., 112, 252103(2018).

    [40] S.-R. Jeon, Y.-H. Song, H.-J. Jang, G. M. Yang, S. W. Hwang, S. J. Son. Lateral current spreading in GaN-based light-emitting diodes utilizing tunnel contact junctions. Appl. Phys. Lett., 78, 3265-3267(2001).

    [41] S. Krishnamoorthy, D. N. Nath, F. Akyol, P. S. Park, M. Esposto, S. Rajan. Polarization-engineered GaN/InGaN/GaN tunnel diodes. Appl. Phys. Lett., 97, 203502(2010).

    [42] Z.-H. Zhang, S. Tiam Tan, Z. Kyaw, Y. Ji, W. Liu, Z. Ju, N. Hasanov, X. Wei Sun, H. Volkan Demir. InGaN/GaN light-emitting diode with a polarization tunnel junction. Appl. Phys. Lett., 102, 193508(2013).

    [43] M. Diagne, Y. He, H. Zhou, E. Makarona, A. Nurmikko, J. Han, K. Waldrip, J. Figiel, T. Takeuchi, M. Krames. Vertical cavity violet light emitting diode incorporating an aluminum gallium nitride distributed Bragg mirror and a tunnel junction. Appl. Phys. Lett., 79, 3720-3722(2001).

    [44] T. Takeuchi, G. Hasnain, S. Corzine, M. Hueschen, R. P. Schneider, C. Kocot, M. Blomqvist, Y.-l. Chang, D. Lefforge, M. R. Krames. GaN-based light emitting diodes with tunnel junctions. Jpn. J. Appl. Phys., 40, L861-L863(2001).

    [45] M. J. Grundmann, U. K. Mishra. Multi-color light emitting diode using polarization-induced tunnel junctions. Phys. Status Solidi C, 4, 2830-2833(2007).

    [46] S. Lee, C. A. Forman, C. Lee, J. Kearns, E. C. Young, J. T. Leonard, D. A. Cohen, J. S. Speck, S. Nakamura, S. P. DenBaars. GaN-based vertical-cavity surface-emitting lasers with tunnel junction contacts grown by metal-organic chemical vapor deposition. Appl. Phys. Lett., 11, 062703(2018).

    [47] Y. Zhang, S. Krishnamoorthy, F. Akyol, A. A. Allerman, M. W. Moseley, A. M. Armstrong, S. Rajan. Design of p-type cladding layers for tunnel-injected UV-A light emitting diodes. Appl. Phys. Lett., 109, 191105(2016).

    [48] Y. Zhang, S. Krishnamoorthy, F. Akyol, S. Bajaj, A. A. Allerman, M. W. Moseley, A. M. Armstrong, S. Rajan. Tunnel-injected sub-260 nm ultraviolet light emitting diodes. Appl. Phys. Lett., 110, 201102(2017).

    [49] C. Kuhn, L. Sulmoni, M. Guttmann, J. Glaab, N. Susilo, T. Wernicke, M. Weyers, M. Kneissl. MOVPE-grown AlGaN-based tunnel heterojunctions enabling fully transparent UVC LEDs. Photon. Res., 7, B7-B11(2019).

    [50] A. Pandey, X. Liu, Z. Deng, W. Shin, D. Laleyan, K. Mashooq, E. Reid, E. Kioupakis, P. Bhattacharya, Z. Mi. Enhanced doping efficiency of ultrawide band gap semiconductors by metal-semiconductor junction assisted epitaxy. Phys. Rev. Mater., 3, 053401(2019).

    [51] J. Simon, V. Protasenko, C. Lian, H. Xing, D. Jena. Polarization-induced hole doping in wide-band-gap uniaxial semiconductor heterostructures. Science, 327, 60-64(2010).

    [52] Y. Zhang, S. Krishnamoorthy, F. Akyol, A. A. Allerman, M. W. Moseley, A. M. Armstrong, S. Rajan. Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions. Appl. Phys. Lett., 109, 121102(2016).

    [53] M. Auf der Maur, B. Galler, I. Pietzonka, M. Strassburg, H. Lugauer, A. Di Carlo. Trap-assisted tunneling in InGaN/GaN single-quantum-well light-emitting diodes. Appl. Phys. Lett., 105, 133504(2014).

    [54] X. Cao, E. Stokes, P. Sandvik, S. LeBoeuf, J. Kretchmer, D. Walker. Diffusion and tunneling currents in GaN/InGaN multiple quantum well light-emitting diodes. IEEE Electron Device Lett., 23, 535-537(2002).

    [55] C. Bayram, Z. Vashaei, M. Razeghi. Reliability in room-temperature negative differential resistance characteristics of low-aluminum content AlGaN/GaN double-barrier resonant tunneling diodes. Appl. Phys. Lett., 97, 181109(2010).

    [56] V. Fan Arcara, B. Damilano, G. Feuillet, S. Vézian, K. Ayadi, S. Chenot, J.-Y. Duboz. Ge doped GaN and Al0.5Ga0.5N-based tunnel junctions on top of visible and UV light emitting diodes. J. Appl. Phys., 126, 224503(2019).

    [57] E. Vadiee, E. A. Clinton, H. McFavilen, A. S. Weidenbach, Z. Engel, C. Matthews, C. Zhang, C. Arena, R. R. King, C. B. Honsberg. InGaN solar cells with regrown GaN homojunction tunnel contacts. Appl. Phys. Lett., 11, 082304(2018).

    [58] E. C. Young, B. P. Yonkee, F. Wu, S. H. Oh, S. P. DenBaars, S. Nakamura, J. S. Speck. Hybrid tunnel junction contacts to III-nitride light-emitting diodes. Appl. Phys. Lett., 9, 022102(2016).

    [59] Y.-J. Lee, C.-H. Chen, C.-J. Lee. Reduction in the efficiency-droop effect of InGaN green light-emitting diodes using gradual quantum wells. IEEE Photon. Technol. Lett., 22, 1506-1508(2010).

    [60] J. Piprek. Efficiency droop in nitride-based light-emitting diodes. Phys. Status Solidi A, 207, 2217-2225(2010).

    [61] M.-H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, Y. Park. Origin of efficiency droop in GaN-based light-emitting diodes. Appl. Phys. Lett., 91, 183507(2007).

    [62] E. Kioupakis, P. Rinke, K. T. Delaney, C. G. Van de Walle. Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes. Appl. Phys. Lett., 98, 161107(2011).

    [63] X. Hai, R. Rashid, S. Sadaf, Z. Mi, S. Zhao. Effect of low hole mobility on the efficiency droop of AlGaN nanowire deep ultraviolet light emitting diodes. Appl. Phys. Lett., 114, 101104(2019).

    [64] D. S. Meyaard, G.-B. Lin, Q. Shan, J. Cho, E. Fred Schubert, H. Shim, M.-H. Kim, C. Sone. Asymmetry of carrier transport leading to efficiency droop in GaInN based light-emitting diodes. Appl. Phys. Lett., 99, 251115(2011).

    [65] N. H. Tran, B. H. Le, S. Zhao, Z. Mi. On the mechanism of highly efficient p-type conduction of Mg-doped ultra-wide-bandgap AlN nanostructures. Appl. Phys. Lett., 110, 032102(2017).

    [66] R. Collazo, S. Mita, J. Xie, A. Rice, J. Tweedie, R. Dalmau, Z. Sitar. Progress on n-type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications. Phys. Status Solidi C, 8, 2031-2033(2011).

    [67] X. Liu, A. Pandey, D. A. Laleyan, K. Mashooq, E. T. Reid, W. J. Shin, Z. Mi. Charge carrier transport properties of Mg-doped Al0.6Ga0.4N grown by molecular beam epitaxy. Semicond. Sci. Technol., 33, 085005(2018).

    [68] A. Bhattacharyya, T. Moustakas, L. Zhou, D. J. Smith, W. Hug. Deep ultraviolet emitting AlGaN quantum wells with high internal quantum efficiency. Appl. Phys. Lett., 94, 181907(2009).

    [69] Y. Liao, C. Thomidis, C.-K. Kao, T. D. Moustakas. AlGaN based deep ultraviolet light emitting diodes with high internal quantum efficiency grown by molecular beam epitaxy. Appl. Phys. Lett., 98, 081110(2011).

    [70] Y. Wang, A. S. Özcan, K. F. Ludwig, A. Bhattacharyya, T. Moustakas, L. Zhou, D. J. Smith. Complex and incommensurate ordering in Al0.72Ga0.28N thin films grown by plasma-assisted molecular beam epitaxy. Appl. Phys. Lett., 88, 181915(2006).

    [71] O. Ambacher, B. Foutz, J. Smart, J. Shealy, N. Weimann, K. Chu, M. Murphy, A. Sierakowski, W. Schaff, L. Eastman, R. Dimitrov, A. Mitchell, M. Stutzmann. Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures. J. Appl. Phys., 87, 334-344(2000).

    [72] J. Simon, Z. Zhang, K. Goodman, H. Xing, T. Kosel, P. Fay, D. Jena. Polarization-induced Zener tunnel junctions in wide-band-gap heterostructures. Phys. Rev. Lett., 103, 026801(2009).

    [73] Y. Gu, N. Narendran, T. Dong, H. Wu. Spectral and luminous efficacy change of high-power LEDs under different dimming methods. Proc. SPIE, 6337, 63370J(2006).

    [74] J. Cho, E. F. Schubert, J. K. Kim. Efficiency droop in light-emitting diodes: challenges and countermeasures. Laser Photon. Rev., 7, 408-421(2013).

    [75] S. Karpov. ABC-model for interpretation of internal quantum efficiency and its droop in III-nitride LEDs: a review. Opt. Quantum Electron., 47, 1293-1303(2015).

    [76] F. Nippert, M. Tollabi Mazraehno, M. J. Davies, M. P. Hoffmann, H.-J. Lugauer, T. Kure, M. Kneissl, A. Hoffmann, M. R. Wagner. Auger recombination in AlGaN quantum wells for UV light-emitting diodes. Appl. Phys. Lett., 113, 071107(2018).

    CLP Journals

    [1] Huabin Yu, Zhongjie Ren, Muhammad Hunain Memon, Shi Fang, Danhao Wang, Zhongling Liu, Haochen Zhang, Feng Wu, Jiangnan Dai, Changqing Chen, Haiding Sun. Cascaded deep ultraviolet light-emitting diode via tunnel junction[J]. Chinese Optics Letters, 2021, 19(8): 082503

    Full Text
    Get PDF
    Figures&Tables (7)
    Equations (0)
    References (76)
    Cited By (56)
    Get Citation
    Copy Citation Text
    A. Pandey, W. J. Shin, J. Gim, R. Hovden, Z. Mi. High-efficiency AlGaN/GaN/AlGaN tunnel junction ultraviolet light-emitting diodes[J]. Photonics Research, 2020, 8(3): 331
    Download Citation
    EndNote(RIS)
    BibTex
    Plain Text
    Set citation alerts for the article
    Tools
    Share
    Set citation alerts for the article
    Save the article for my favorites
    Paper Information
    Recommended Topics
    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology