High-efficiency AlGaN/GaN/AlGaN tunnel junction ultraviolet light-emitting diodes

A. Pandey; W. J. Shin; J. Gim; R. Hovden; Z. Mi

doi:10.1364/PRJ.383652

Journals >Photonics Research >Volume 8 >Issue 3 >Page 331 > Article

Photonics Research
Vol. 8, Issue 3, 331 (2020)

High-efficiency AlGaN/GaN/AlGaN tunnel junction ultraviolet light-emitting diodes | EIC Choice Award

A. Pandey¹, W. J. Shin¹, J. Gim², R. Hovden², and Z. Mi^1、*

Author Affiliations

¹Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, USA

²Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, USA

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DOI: 10.1364/PRJ.383652 Cite this Article Set citation alerts

A. Pandey, W. J. Shin, J. Gim, R. Hovden, Z. Mi. High-efficiency AlGaN/GaN/AlGaN tunnel junction ultraviolet light-emitting diodes[J]. Photonics Research, 2020, 8(3): 331 Copy Citation Text

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A. Pandey, W. J. Shin, J. Gim, R. Hovden, Z. Mi. High-efficiency AlGaN/GaN/AlGaN tunnel junction ultraviolet light-emitting diodes[J]. Photonics Research, 2020, 8(3): 331

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