[1] R Gualtieri. Multi-mode TES bolometer optimization for the LSPE-SWIPE instrument. Journal of Low Temperature Physics, 184, 527-533(2016).

[2] H Shishido, S Miyajima, Y Narukami et al. Neutron detection using a current biased kinetic inductance detector. Applied Physics Letters, 107, 232601(2015).

[3] D Rabanus, U U Graf, M Philipp et al. Phase locking of a 1.5 Terahertz quantum cascade laser and use as a local oscillator in a heterodyne HEB receiver. Optics Express, 17, 1159-1168(2009).

[4] G Fujii, M Ukibe, M Ohkubo. Improvement of soft x-ray detection performance in superconducting-tunnel-junction array detectors with close-packed arrangement by three-dimensional structure. Superconductor Science and Technology, 28, 104005(2015).

[5] Kai-Sheng LIAO, Zhi-Feng LI, Chao WANG et al. Si:P blocked impurity band detectors for far infrared detection. Journal of Infrared and Millimeter Wave, 35, 37-41(2016).

[6] Chao WANG, Ning LI, Ning DAI et al. Ion-Implanted Si:As blocked impurity band detectors for VLWIR detection. Journal of Infrared and Millimeter Waves, 39, 290-294(2020).

[7] M Petroff, M G Stapelbroek. Blocked impurity band detectors(1986).

[8] S B Stetson, D B Reynolds, M G Stapelbroek et al. Design and performance of blocked-impurity-band detector focal plane arrays. Proceedings of SPIE - The International Society for Optical Engineering, 686, 48-65(1986).

[9] D M Watson, J E Huffman. Germanium blocked‐impurity‐band far‐infrared detectors. Applied Physics Letters, 52, 1602-1604(1988).

[10] H Zhu, Z P Weng, J Q Zhu et al. Surface plasmon enhanced Si-based BIB terahertz detectors. Applied Physics Letters, 111, 053505(2017).

[11] J Chen, G H Li, B C Chen et al. Uniformly broadband far-infrared response from the photocarrier tunneling of Mesa Si:P blocked-impurity-band detector. IEEE Transactions on Electron Devices, 68, 560-564(2021).

[12] H Zhu, C Wang, P Wang et al. Optimized Si-based blocked impurity band detector under alternative operational mode. IEEE Transactions on Electron Devices, 66, 3891-3895(2019).

[13] J Q Zhu, H Zhu, H L Xu et al. Impact of the structural parameters on the photoresponse of terahertz blocked-impurity-band detectors with planar structure. IEEE Transactions on Terahertz Science and Technology, 10, 358-362(2020).

[14] F Szmulowicz, F L Madarasz. Blocked impurity band detectors—an analytical model: Figures of merit. Journal of Applied Physics, 62, 2533-2540(1987).

[15] N M Haegel, S A Samperi, A M White. Electric field and responsivity modeling for far-infrared blocked impurity band detectors. Journal of Applied Physics, 93, 1305-1310(2003).

[16] N F Mott, W D Twose. The theory of impurity conduction. Advances in Physics, 10, 107-163(1961).

[17] A L Efros, B I Shklovskii, I Y Yanchev. Impurity conductivity in low compensated semiconductors. Physica Status Solidi, 50, 45-52(2010).

[18] J Bandaru. Liquid helium growth and characteristion of germanium far infrared blocked impurity band detectors(2001).

[19] B L Cardozo. GaAs blocked impurity band detectors for far infrared astronomy(2004).

[20] J W Beeman, S Goyal, L A Reichertz et al. Ion-implanted Ge:B far-infrared blocked-impurity-band detectors. Infrared Physics & Technology, 51, 60-65(2007).

[21] P Rauter, T Fromherz, S Winnerl et al. Terahertz Si:B blocked-impurity-band detectors defined by nonepitaxial methods. Applied Physics Letters, 93, 261104(2008).

[22] K F Berggren, B E Sernelius. Band-gap narrowing in heavily doped many-valley semiconductors. J Physical Review B, 24, 1971-1986(1981).

[23] S C Jain, D J Roulston. A simple expression for band gap narrowing (BGN) in heavily doped Si, Ge, GaAs and GexSi1-x strained layers. Solid-State Electronics, 34, 453-465(1991).

[24] R E Camacho-Aguilera, Z Han, C Yan et al. Direct band gap narrowing in highly doped Ge. Applied Physics Letters, 102, 152106(2013).

[25] K S Liao, N Li, C Wang et al. Extended mode in blocked impurity band detectors for terahertz radiation detection. Applied Physics Letters, 105, 143501(2014).

[26] H Zhu, Z Weng, J Zhu et al. Comparison of Photoresponse of Si-Based BIB THz Detectors. IEEE Transactions on Electron Devices, 64, 1094-1099(2017).

[27] J J P R Frenkel. On pre-breakdown phenomena in insulators and electronic semi-conductors. Physical Review, 54, 647(1938).

[28] S M Sze, K K NG. Physics of semiconductor devices(2006).

[29] B G Martin, H P Lee, E W Jones. GaAs/AlAs/Si heterostructures for blocking dark current injection in impurity‐band‐conduction photodetectors. Applied Physics Letters, 68, 1250-1252(1996).

[30] A Rogalski. Infrared detectors(2011).

[31] Ding-Yuan TANG, Zheng-Yu Mi. Introduction to optoelectronic devices(1989).

[32] X H Liu, X H Zhou, N Li et al. Effects of bias and temperature on the intersubband absorption in very long wavelength GaAs/AlGaAs quantum well infrared photodetectors. Journal of Applied Physics, 115, 124503(2014).

[33] S Li Sheng. Semiconductor physical electronics(2007).

[34] C Y Pan, Z W Yin, Z Y Song et al. Dark current blocking mechanism in BIB far-infrared detectors by interfacial barriers. IEEE Transactions on Electron Devices, 68, 2804-2809(2021).

[35] E Simoen, B Dierickx, L Deferm et al. The behavior of siliconp‐njunction‐based devices at liquid helium temperatures. Journal of Applied Physics, 70, 1016-1024(1991).