• Journal of Semiconductors
  • Vol. 43, Issue 1, 011001 (2022)
2D twist systemTwist-angleBand structurePhysical propertyRef.
N/A: Not available
Non-magic-angleFormation of DOS gap[66, 67]
Formation of Moiré bandgap[68]
GrapheneMagic-angleCorrelated insulating state[43]
Unconventional superconductivity[44]
Pomeranchuk effect[50]
Integer quantum Hall effect[53]
Josephson effect[54, 55]
TMDsNo magic-angleAtomic reconstruction[69]
Interlayer hybridization[70–72]
Correlated electronic state[58, 59]
Superconductivity[62]
BP90°Orientation barrier[73]
Rectification effect[74]
h-BN0.6°N/ATunable ferroelectricity[75]
Table 1. Primary 2D materials for twisting with their typical band structure and important physical properties.
2D twist systemTwist-angleOptoelectronicElectronicRef.
WavelengthPhotoresponsivityRectification ratioOn/Off ratio
N/A: Not available
Graphene0.6°432 μm ~ 80 mV/WN/AN/A[79]
1.81°1200 nm26 mA/WN/AN/A[68]
10°633 nm/48°2.2 V/WN/AN/A[78]
10°633 nm2.5 mA/WN/AN/A[67]
12°532 nm/52°1.6 V/WN/AN/A[78]
13°532 nm1 mA/WN/AN/A[66]
MoS230°N/AN/AN/A108[77]
MoSe2/WSe215°365 nm2 A/WN/AN/A[98]
60°926 nmN/AN/AN/A[69]
BP90°532 nm4.6 mA/W115N/A[73]
Table 2. Collection of primary devices and their (opto)electrical property parameters.