Journals >Journal of Semiconductors
Contents
2022
Volume: 43 Issue 1
6 Article(s)
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News and Views
All-optical switching based on self-assembled halide perovskite microwires
Qing Zhang, and Jun Zhang
Journal of Semiconductors
- Publication Date: Jan. 01, 2022
- Vol. 43, Issue 1, 010401 (2022)
Research Highlights
Anisotropic 2D materials for post-Moore photoelectric devices
Dingdong Xie, Jie Jiang, and Liming Ding
Journal of Semiconductors
- Publication Date: Jan. 01, 2022
- Vol. 43, Issue 1, 010201 (2022)
F-containing cations improve the performance of perovskite solar cells
Qin Zhou, Chuantian Zuo, Zilong Zhang, Peng Gao, and Liming Ding
Journal of Semiconductors
- Publication Date: Jan. 01, 2022
- Vol. 43, Issue 1, 010202 (2022)
Alkali metal cation engineering in organic/inorganic hybrid perovskite solar cells
Jilin Wang, Ruibin Tang, Lixiu Zhang, Fei Long, Disheng Yao, and Liming Ding
Journal of Semiconductors
- Publication Date: Jan. 01, 2022
- Vol. 43, Issue 1, 010203 (2022)
Reviews
Twist-angle two-dimensional superlattices and their application in (opto)electronics
Twist-angle two-dimensional systems, such as twisted bilayer graphene, twisted bilayer transition metal dichalcogenides, twisted bilayer phosphorene and their multilayer van der Waals heterostructures, exhibit novel and tunable properties due to the formation of Moiré superlattice and modulated Moiré bands. TTwist-angle two-dimensional systems, such as twisted bilayer graphene, twisted bilayer transition metal dichalcogenides, twisted bilayer phosphorene and their multilayer van der Waals heterostructures, exhibit novel and tunable properties due to the formation of Moiré superlattice and modulated Moiré bands. The review presents a brief venation on the development of “twistronics” and subsequent applications based on band engineering by twisting. Theoretical predictions followed by experimental realization of magic-angle bilayer graphene ignited the flame of investigation on the new freedom degree, twist-angle, to adjust (opto)electrical behaviors. Then, the merging of Dirac cones and the presence of flat bands gave rise to enhanced light-matter interaction and gate-dependent electrical phases, respectively, leading to applications in photodetectors and superconductor electronic devices. At the same time, the increasing amount of theoretical simulation on extended twisted 2D materials like TMDs and BPs called for further experimental verification. Finally, recently discovered properties in twisted bilayer h-BN evidenced h-BN could be an ideal candidate for dielectric and ferroelectric devices. Hence, both the predictions and confirmed properties imply twist-angle two-dimensional superlattice is a group of promising candidates for next-generation (opto)electronics..
Journal of Semiconductors
- Publication Date: Jan. 01, 2022
- Vol. 43, Issue 1, 011001 (2022)
Short Communication
A 357.9 nm GaN/AlGaN multiple quantum well ultraviolet laser diode
Jing Yang, Degang Zhao, Zongshun Liu, Feng Liang, Ping Chen, Lihong Duan, Hai Wang, and Yongsheng Shi
Journal of Semiconductors
- Publication Date: Jan. 01, 2022
- Vol. 43, Issue 1, 010501 (2022)
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