[1] Peng Yingcai,Zhao Xinwei,Fu Guangsheng.Progress of Si-based nanocrystalline luminescent materials [J].Chinese Science Bulletin,2002,47(15):1233-1242.
[2] Masini G,Colace L,et al.Si based optoelectronics for communications [J].Mater.Sci.Eng.,2002,B89:2-9.
[3] Canham L,Aston R.Will a chip every day keep the doctor away [J].Physics World,2001,27-31.
[5] Grimaldi M G,Bongiorno C,Spinella C,et al.Luminescence from β-FeSi2 precipitates in Si.Ⅰ:Morphology and epitaxial relationship [J].Phys.Rev.,2002,B66(8):085319-1-085319-10.
[6] Martinelli L,Grilli E,Migas D B,et al.Luminescence fromβ-FeSi2 precipitates in Si.Ⅱ:Origin and nature of the photoluminescence [J].Phys.Rev.,2002,B66(8):085320-1-085320-9.
[7] Zhang P,Crespi V H,Chang E,et al.Computational design of direct-band semiconductor that lattice-match silicon [J].Nature,2001,490:69-71.
[8] Tit N,Dharma-Wardana M W C.Existence of direct bandgap transition in Si/SiO2 superlattice [J].Phys.Lett.,1999,254:233-238.
[9] Rogozhina E,Belomoin G,Smith A,et al.Si-N linkage in ultrabright,ultrasmall Si nanoparticles [J].Appl.Phys.Lett.,2001,78(23):3711-3713
[10] Nishida M.Electronic structure calculations of ultrasmall Si quantum boxes:Characteristics of band-edge states [J].Phys.Rev.,2002,B66(12):125313-1-125313-10.
[11] Belomoin G,Rogozhina E,Therrien J,et al.Effects of surface termination on the band gap of ultrabright Si29nanoparticles:Experiments and computational models [J].Phys.Rev.,2002,B65(19):193406-1-193406-4.
[13] Li J L,Jia J F,et al.Spontaneous assembly of perfectly ordered indentical-size nanocluster arrays [J].Phys.Rev.Lett.,2002,88(6):066101-1-066101-3.
[14] Kanayama T,Miyoko O,Watanabe M,et al.Nanofabrication using structure controlled hydro genated Si clusters deposited on Si surfaces [J].J.Vac.Sci.Technol.,2000,B18(6):3497-3500.
[15] Mori H,Nagai H,Yanagawa T,et al.Formation of Ge quantum dots on boronreconstructed surface/Si(ill)[J].Mater.Sci.Eng.,2002,B89:188-190.
[16] Shi H Q,Radny M W,Smith P V.Electronic structure of the Si(111)surface [J].Phys.Rev.,2002,B66(8):085329-1-085329-8.
[18] Jin G,Liu J L,Wang K L.Regimented placement of self-assembled Ge dots on selectively grown Si mesas [J].Appl.Phys.Lett.,2000,76(24):3591-3593.
[19] Vescan L,Stoica T.Luminescence of laterally ordered Ge islands along(100)directions [J].J.Appl.Phys.,2002,91(12):10119-10126.
[20] Omi H,Bottomley D J.Homma Y,et al.Shape of atomic step on Si(111)under localized stress [J].Phys.Rev.,2002,B66(8):085303-1-085303-5.
[21] Bottomley D J,Omi H,Kobayashi Y,et al.Origin of self-assembled step and terrace formation at the Si(001)-SiO2 interface [J].Phys.Rev.,2002,66(3):035301-1-035301-5.
[22] Miyazaki S,Hamamoto Y,Yoshida E,et al.Control of self-assembling formation of nanometer silicon dots by low pressure chemical vapor deposition [J].Thin SoLid Films,2000,369:55-59.
[23] Hirano Y,Sato F,Miyazaki S,et al.Photoconductive properties of nanometer-sized Si dot multilayers [J].Appl.Phys.Lett.,2001,79(14):2255-2257
[25] Shirai H,Fujimura Y,Jung S.Formation of nanocrystalline SiLicon dot from chlorinated materials by RF plasmaenhanced chemical vapor deposition [J].Thin Solid films,2002,407:12-17.
[26] Yasuda T,Nishizawa M,Yamasaki S.Resistless pattern definition and Si selective-area deposition using an ultrathin SiO2 mask layer treated by SiHCla [J].Appl.Phys.Lett.,2000,76(22):3203-3205.
[27] Miyata N,Watanabe H,Ichikawa M.Selective growth of nanocrystalline Si dots using an ultrathin-Sioxide/oxynitride mask [J].Appl.Phys.Lett.,2000,77(11):1620-1622.
[28] Kato K,Nakasaki Y,Uda T.Atomic processes of NO oxynitridation an Si(100)surface [J].Phys.Rev.,2002,B66(7):075308-1-075308-5.
[29] Zacharias M,Heitmann J,Scholz R,et al.Size-controlled highly luminescent silicon nanocrystals:A SiO/SiO2superlattice approach [J].Appl.Phys.Lett.,2002,80(4):661-663.
[30] Miller T,Heinig K H,Moller W.Size and location control of Si nanocrystals at ion beam synthesis in thin SiO2films [J].Appl.Phys.Lett.,2002,81(16):3049-3051.
[31] Khriachtchev L,Novikov S,Lahtinen J.Thermal annealing of Si/SiO2 materials:Modification of structural and photoluminescence emission properties [J].J.Appl.Phys.,2002,92(10):5856-5862.
[32] Neshva D,Raptis C,Perakis A,et al.Raman scattering and photoluminescence from Si namoparticles in annealling SiOx thin films [J].J.Appl.Phys.,2002,92(8):4678-4683.
[34] Usami N,Araki Y,Ito Y,et al.Modification of the growth mode of Ge on Si by buried Ge islands [J].Appl.Phys.Lett.,2000,76(25):3723-3725.
[35] Miura M,Hartmann J M,Zhang J,et al.Formation process and ordering of self-assembled Ge islands [J].Thin Solid Films,2000,369:104-107.
[36] Takamiya H,Miura M,Mitsui J,et al.Size reduction of the Ge islands by utizing the strain fields from the lower temperature grown hut-clusters buried in the matrix [J].Mater.Sci.Eng.,2002,B89:58-61.
[37] Herbst M,Schramm C,Brunner K,et al.Structural and optical properties of vertical correlated Ge island layer grown at low temperatures [J].Mater.Sci.Eng.,2002,B89:54-59.
[38] Boucaud P,Thanh V L,Yam V,et al.Aspects of Ge/Si self-assembled quantum dots [J].Mater.Sci.Eng.,2002,B89:36-44.
[39] Derivaz M,Noe P,Rouviere J L,et al.Epitaxial growth of germanium dots on silicon(001)surface covered by a very thin dielectric layer [J].Mater.Sci.Eng.,2002,B89:191-195.
[40] Leifeld O,Beyer A,Griitzmacher D,et al.Nucleation of Ge dot on the C-alloyed Si(001)surface [J].Phys.Rev.,2002,B66(12):125312-1-125312-4.
[41] Omi H,Bottomley D J,Homma Y,et al.Wafer-scale strain engineering on silicon for fabrication of ultimately confrolled nanostructures [J].Phys.Rev.,2003,B67:115302-1-115302-10.
[42] Zhao X W,Isshiki H,Aoyagi Y,et al.Formation and device application of Er-doped nanocrystalline Si using laser ablation [J].Mater.Sci.Eng.,2000,B74:197-201.
[43] Ng W L,Lourenc M A,Gwilliam R M,et al.An efficient room-temperature silicon-based light-emitting diode [J].Nature,2001,410:192-194.
[44] Takamiya H,Miura M,Usami N,et al.Drastic modification of the growth mode of Ge quantum dots on Si by using boron adlayer [J].Thin Solid Film,2000,369:84-87.
[46] Iacona F,Pacifici D,Irrera A,et al.Electroluminescence at 1.54μm in Er-doped Si nanocluster-based edvices[J].Appl.Phys.Lett.,2002,81(17):3242-3244.
[47] Zhang Q,Filios A,et al.Ultra-stable visible electroluminescence from crystalline c-Si/O superlattice [J].Physica,2000,E8:365-368.
[48] Elkurdi M,Boucaud P,Sauvage S,et al.Near-infrared waveguide photodetector with Ge/Si self-assembled quantum dots [J].Appl.Phys.Lett.,2002,80(3):509-511.
[49] Elkurdi M,Boucaud P,Sauvage S,et al.Silicon-on-insulator waveguide photodetector with Ge/Si self-assembled islands [J].J.Appl.Phys.,2002,92(4):1858-1861.
[50] Zhao X W,Komuro S,Isshiki H,et al.Fabrication and stimulation emission of Er-doped nanocrystalline Si waveguides formed on Si substrates by laser ablation [J].Appl.Phys.Lett.,1999,74(1):120-122.
[51] Kik P G,Polman A.Exciton-erbium energy transfer in Si nanocrystal-doped SiO2 [J].Mater.Sci.Eng.,2001,B81:3-8.
[52] Iacona F,Franzo g,Moreira E C,et al.Silicon nanocrystals and Er3+ ions in an optical microcavity [J].J.Appl.Phys.,2001,89(12):8354-8356.
[53] Lopez H A,Fauchet P M.Infrared LEDS and microcavities based on erbium doped silicon nanocomposites [J].Mater.Sci.Eng.,2001,B81:91-96.
[54] Toshikiyo K,Fujii M,Hayashi S,et al.Enhanced optical properties of Si1-xGex alloy nanocrystals in a planar microcarity [J].J.Appl.Phys.,2003,93(4):2178-2181.
[56] Blanco A,Chomski E,Grabtchak S,et al.Large-scale synthesis of a silicon photonic crystal with a complete three-dimensional bandgap near 1.5 micormetres [J].Nature,2000,405:437-439.
[57] Lopez H A,Fauchet M F.Erbium emission from porous silicon one-dimensional photonic bandgap structures [J].Appl.Phys.Lett.,2000,77(23):3704-3706.
[58] Viasov Y A,Bo X Z,Sturm J C,et al.On-chip natural assembly of silicon photonic bandgap crystals [J].Nature,2001,414:289-293.
[59] Pavesi L,Negro L D,Mazzoieni C,et al.Optical gain in silicon nanocrystals.Nature,2000,408:440-444.
[60] Khriachtchev L,Rasanen M.Optical gain in Si/SiO2 lattice:Experimental evidence with nanosecond pulses [J].Appl.Phys.Lett.,2001,79(9):1249-1251.
[61] Canham L.Let there be light [J].Nature,2001,409:974-976.
[62] Duan X F,Huang Y,Agarwal R,et al.Single-nanowireelectrically driven lasers [J].Nature,2003,421:241-245.
