Journals >Chinese Journal of Quantum Electronics
Contents
2004
Volume: 21 Issue 3
23 Article(s)
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Research Article
Study and prospect of Si-based optoelectronics
[in Chinese], [in Chinese], [in Chinese], and [in Chinese]
Si-based optoelectronics is becoming a very active research area due to its potential applications for optical communications. One of the major goals of this study is to realize all-Si optoelectronic integrated circuit. We mainly reviewed the current developments of this exciting field in the recent years. The involvedSi-based optoelectronics is becoming a very active research area due to its potential applications for optical communications. One of the major goals of this study is to realize all-Si optoelectronic integrated circuit. We mainly reviewed the current developments of this exciting field in the recent years. The involved contents indude the design of direct bandgap Si-based low dimensional materials, fabrication of ordered Si-based nanocrystalline films and approach of stable and high-efficient Si-based light-emitting devices. Finally, we predicate the developed tendency of all-Si optoelectronic integrated technology in the near future..
Chinese Journal of Quantum Electronics
- Publication Date: Jun. 01, 2004
- Vol. 21, Issue 3, 273 (2004)
Research and development of emerald laser crystals
[in Chinese], [in Chinese], [in Chinese], and [in Chinese]
Emerald is an excellent tunable laser crystal. The characteristics of emerald single crystal grown by the hydrothermal method and flux method as well as present situation of laser optics research had been summed up. By researching on the domatic hydrothermal emerald optical spectra and laser properties, the author concEmerald is an excellent tunable laser crystal. The characteristics of emerald single crystal grown by the hydrothermal method and flux method as well as present situation of laser optics research had been summed up. By researching on the domatic hydrothermal emerald optical spectra and laser properties, the author concluded that the development direction of emerald laser is the lager size and the better quality crystal growth..
Chinese Journal of Quantum Electronics
- Publication Date: Jun. 01, 2004
- Vol. 21, Issue 3, 286 (2004)
Color difference computation based on the semispherical spectral-reflectance measurement
[in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
ISI2000NV is a system for both semispherical spectral reflectance and color difference measurement. It can gives color difference of objects based on semispherical spectral reflectance in visible and near infrared wave bands measured by its internal spectrometer. The principle and method of color difference computationISI2000NV is a system for both semispherical spectral reflectance and color difference measurement. It can gives color difference of objects based on semispherical spectral reflectance in visible and near infrared wave bands measured by its internal spectrometer. The principle and method of color difference computation were investigated in detail..
Chinese Journal of Quantum Electronics
- Publication Date: Jun. 01, 2004
- Vol. 21, Issue 3, 290 (2004)
Optimization of optical heterodyne magnetic rotation enhanced velocity modnlation spectroscopy
[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
Optical heterodyne magnetic rotation enhanced velocity modulation spectroscopy(OH-MR-VMS) is an absorption spectroscopic technique for selective detection of the molecular ions. The advantages of this technique with high sensitivity and high signal-to-noise ratio were discussed. The factors that affect the experimentalOptical heterodyne magnetic rotation enhanced velocity modulation spectroscopy(OH-MR-VMS) is an absorption spectroscopic technique for selective detection of the molecular ions. The advantages of this technique with high sensitivity and high signal-to-noise ratio were discussed. The factors that affect the experimental results were analyzed and the process of signal optimization was also proposed..
Chinese Journal of Quantum Electronics
- Publication Date: Jun. 01, 2004
- Vol. 21, Issue 3, 295 (2004)
Experimental study on reaction of H3O+(H2O)n(n = O～4) with methanol and ethanol
[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
By the reaction of water vapor with He+ and He* which were generated by hollow cathode discharge of helium, H3O+(H2O)n(n= 0-4) was produced. We studied the reactions of H3O+(H2O)n(n= 0-4) with methanol and ethanol in a flowing afterglow mass spectrometer. Various ionic products were identified. They were formed by protBy the reaction of water vapor with He+ and He* which were generated by hollow cathode discharge of helium, H3O+(H2O)n(n= 0-4) was produced. We studied the reactions of H3O+(H2O)n(n= 0-4) with methanol and ethanol in a flowing afterglow mass spectrometer. Various ionic products were identified. They were formed by proton-transfer, ligand switching . association and condensation reactions..
Chinese Journal of Quantum Electronics
- Publication Date: Jun. 01, 2004
- Vol. 21, Issue 3, 302 (2004)
Laser-induced fluorencence excitation spectrum of B2∑μ+←X2∑g+transition of C2 anion
[in Chinese], [in Chinese], and [in Chinese]
Laser-induced fluorencence excitation spectrum of B←X(l-0) transition of C2 anions producing from discharging with the CH4/Ar mixture under the supersonic jet was reported. The rotational spectrum was assigned, furthermore rotational constants of X and B states were determined. In addition, the lifetime measurement forLaser-induced fluorencence excitation spectrum of B←X(l-0) transition of C2 anions producing from discharging with the CH4/Ar mixture under the supersonic jet was reported. The rotational spectrum was assigned, furthermore rotational constants of X and B states were determined. In addition, the lifetime measurement for the B(v = 1) state was carried out and the lifetime obtained is 80±1 ns..
Chinese Journal of Quantum Electronics
- Publication Date: Oct. 12, 2021
- Vol. 21, Issue 3, 307 (2004)
Theoretical research on relaxation oscillation in solid-state laser with relaxation oscillating pumping
[in Chinese], [in Chinese], [in Chinese], and [in Chinese]
The relaxation oscillation in solid-state laser with relaxation oscillation pumping was studied theoretically. The undulation of the laser photon density contains relaxation oscillation frequency itself and that of pumping. When those two frequencies are close, the oscillation will be resonated. Especially, when the deThe relaxation oscillation in solid-state laser with relaxation oscillation pumping was studied theoretically. The undulation of the laser photon density contains relaxation oscillation frequency itself and that of pumping. When those two frequencies are close, the oscillation will be resonated. Especially, when the decay rates of the two frequency oscillations are same, the resonation will be strengthened greatly. PD feedback can restrain the relaxation oscillation effectively..
Chinese Journal of Quantum Electronics
- Publication Date: Jun. 01, 2004
- Vol. 21, Issue 3, 311 (2004)
Solid-state micro-pulsed Nd:GdVO2 laser
[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
The relation of the solid-state Nd:GdVO2 output power and pulse width with pump power variety, using different perrneation-ratio Q-switched crystal was studied. We obtained the optical-optical transform efficiency of 53%, and the smallest pulse width of 27.29 ns.The relation of the solid-state Nd:GdVO2 output power and pulse width with pump power variety, using different perrneation-ratio Q-switched crystal was studied. We obtained the optical-optical transform efficiency of 53%, and the smallest pulse width of 27.29 ns..
Chinese Journal of Quantum Electronics
- Publication Date: Jun. 01, 2004
- Vol. 21, Issue 3, 317 (2004)
Analyses of radial temperature distribution in the Ne-H2-CuBr laser discharge tube and in the discharge tube with diaphragms
[in Chinese], and [in Chinese]
A simple model of temperature field was presented for the Ne-H2-CuBr laser discharge tube, and discharge tube with diaphragms. An analytical expression of the radial temperature distribution in the tube was given. The relation between radial temperature distribution and input power and thermal conductivity of the buffeA simple model of temperature field was presented for the Ne-H2-CuBr laser discharge tube, and discharge tube with diaphragms. An analytical expression of the radial temperature distribution in the tube was given. The relation between radial temperature distribution and input power and thermal conductivity of the buffer gas has been described..
Chinese Journal of Quantum Electronics
- Publication Date: Jun. 01, 2004
- Vol. 21, Issue 3, 320 (2004)
Study on generation mechanism and state function of spontaneous parametric down-conversion light field
[in Chinese]
Based on analyzing the interaction of pumping photons and a nonlinear crystal with no center of symmetry, an explanation about the generation mechanism of spontaneous parametric down-conversion (SPDC) light field was put forward. Then state function of SPDC biphoton light field was derived and a probability explanationBased on analyzing the interaction of pumping photons and a nonlinear crystal with no center of symmetry, an explanation about the generation mechanism of spontaneous parametric down-conversion (SPDC) light field was put forward. Then state function of SPDC biphoton light field was derived and a probability explanation was given..
Chinese Journal of Quantum Electronics
- Publication Date: Jun. 01, 2004
- Vol. 21, Issue 3, 325 (2004)
Simulation of quantum key distribution on classical computer
[in Chinese], [in Chinese], and [in Chinese]
The simulation of quantum cryptography on classical computer was discussed. Methods to express the preparation and measurement of quantum states on current computer and the basic algorithms for simulating the quantum key distribution protocols were given. All the corresponding results of each protocol were presented anThe simulation of quantum cryptography on classical computer was discussed. Methods to express the preparation and measurement of quantum states on current computer and the basic algorithms for simulating the quantum key distribution protocols were given. All the corresponding results of each protocol were presented and compared with the theoretic results. It was shown that the simulation results are completely tallied with theoretic ones..
Chinese Journal of Quantum Electronics
- Publication Date: Jun. 01, 2004
- Vol. 21, Issue 3, 331 (2004)
Dipole squeezing in the interaction of a ∧-type three-level atom with a strong coherent field in a high-Q Kerr cavity
[in Chinese], [in Chinese], and [in Chinese]
The dipole squeezing of a A-type three-level atom interacting with a strong coherent field in a high-Q Kerr cavity is investigated. The effects of the Kerr medium, the field-atom coupling coefficient and the detuning on the atomic dipole squeezing are discussed by numerical calculation.The dipole squeezing of a A-type three-level atom interacting with a strong coherent field in a high-Q Kerr cavity is investigated. The effects of the Kerr medium, the field-atom coupling coefficient and the detuning on the atomic dipole squeezing are discussed by numerical calculation..
Chinese Journal of Quantum Electronics
- Publication Date: Jun. 01, 2004
- Vol. 21, Issue 3, 337 (2004)
Influence of atomic coupling on bunching and anti-bunching effects of radiating light field
[in Chinese], and [in Chinese]
The influence of the coupling strength between two atoms on bunching and anti-bunching effects of photons in the system that two atoms with two levels are interacted with a single-mode light field was studied. Numerical simulation results show that the influence of atomics coupling on bunching and anti-buriching effectThe influence of the coupling strength between two atoms on bunching and anti-bunching effects of photons in the system that two atoms with two levels are interacted with a single-mode light field was studied. Numerical simulation results show that the influence of atomics coupling on bunching and anti-buriching effects is non-linear. But we can get anti-bunching light field for proper atomic coupling strength. And the explanation for the mechanism of the influence was given..
Chinese Journal of Quantum Electronics
- Publication Date: Jun. 01, 2004
- Vol. 21, Issue 3, 342 (2004)
Entropy property in the system of a single-mode field interacting with two two-level atoms
[in Chinese], [in Chinese], and [in Chinese]
The time evolution of linear entropy of atom-field coupling system, atom and field in the system of two two-level atoms inside a single-mode cavity with amplitude-damping under the condition of large detuning were investigated. The effects of the initial preparation of two atoms, the decay rate of cavity field and the The time evolution of linear entropy of atom-field coupling system, atom and field in the system of two two-level atoms inside a single-mode cavity with amplitude-damping under the condition of large detuning were investigated. The effects of the initial preparation of two atoms, the decay rate of cavity field and the mean photon number of field on all kinds of linear entropy were discussed. The results show that if both the two atoms are in their excited states or ground states, all the linear entropies equal to zero. But when the two atoms are in their coherent superposition state of excited state and ground state, the cavity dissipation will lead to the system to evolve into a mixed state, the linear entropy of atom and field exhibits periodic oscillations with damped amplitude..
Chinese Journal of Quantum Electronics
- Publication Date: Jun. 01, 2004
- Vol. 21, Issue 3, 347 (2004)
Research on the chaos synchronization self-maintenance characteristic based on chua's circuit
[in Chinese], and [in Chinese]
Chua's circuit and its characteristics, as well as the circuit of realizing non-linearity resistance, are presented. Using Chua's circuit, a drive-response chaotic synchronization system is constructed, by means of imitation, it can be concluded that this synchronization system possesses a certainly stability, Chua's circuit and its characteristics, as well as the circuit of realizing non-linearity resistance, are presented. Using Chua's circuit, a drive-response chaotic synchronization system is constructed, by means of imitation, it can be concluded that this synchronization system possesses a certainly stability, resisting-disturbance and so on. Based on its system and using imitation, the characteristic of chaos synchronization self-maintenance is put forward, and imitation results are presented, this discovery provides the foundation of putting chaos into practice application to secret communication..
Chinese Journal of Quantum Electronics
- Publication Date: Jun. 01, 2004
- Vol. 21, Issue 3, 355 (2004)
Simulation method and improvement of Er-doped fiber source
[in Chinese], and [in Chinese]
The accustomed simulating method-shooting of Er-doped fiber source is improved on and optimized, moreover, the evaluation module of initial value is added on the basis of shooting. The improved arithmetic enhances astringency and astringent rate of the simulation with saturated accuracy, reduces the iteration time obviThe accustomed simulating method-shooting of Er-doped fiber source is improved on and optimized, moreover, the evaluation module of initial value is added on the basis of shooting. The improved arithmetic enhances astringency and astringent rate of the simulation with saturated accuracy, reduces the iteration time obviously. We also simulate the output characteristics of sources with different configurations versus the fiber length by using the improved shooting. The correlational conclusions accord with the experimental results..
Chinese Journal of Quantum Electronics
- Publication Date: Jun. 01, 2004
- Vol. 21, Issue 3, 360 (2004)
Relationship between structure characteristic and blue luminescence in unintentional doped GaN layers
[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
Properties of some GaN and GaN:Mg films with different blue luminescence relative intensity were investigated by Rutherford backscattermg/channeling measurement, double crystal X-ray diffraction measurement, photoluminescence technique, respectively. The blue luminescence in unintentional doped GaN layers obvious relatProperties of some GaN and GaN:Mg films with different blue luminescence relative intensity were investigated by Rutherford backscattermg/channeling measurement, double crystal X-ray diffraction measurement, photoluminescence technique, respectively. The blue luminescence in unintentional doped GaN layers obvious relates with the crystalline quality of those films. The RBS/channeling Xmin and the FWHM of double crystal X-ray diffraction increase with the increase of the intensity ratio of the blue luminescence to the band edge emission. The blue luminescence is due to some defects in unintentional doped GaN films. The peak position of blue luminescence in unintentional doped GaN films do not shift and its intensity superlinear increases with the growth of excitation density. These results indicate that it is the transition from the free electron to acceptor levels. The peak energy of blue luminescence about 2.88 eV in GaN:Mg films increases about 25meV and its intensity linearly increases with the growth of excitation density.These results indicate that it is the transition of donor-acceptor pair in GaN:Mg films.The mechanism of the blue luminescence in unintentional doped GaN films is different from the blue luminescence about 2.9eV in GaN:Mg films..
Chinese Journal of Quantum Electronics
- Publication Date: Jun. 01, 2004
- Vol. 21, Issue 3, 366 (2004)
Self-consistent calculation of the electronic properties of the cube quantum dot
[in Chinese], and [in Chinese]
Using the parabolic potential as confinement potential in quantum dot and using a finite difference method to discrete the Schrodinger-Poisson equations, an numerical self-consistent solution of three-dimension cube GaAs quantum dot is carried out based on spin-density-functional theory (SDFT). The electronic propertieUsing the parabolic potential as confinement potential in quantum dot and using a finite difference method to discrete the Schrodinger-Poisson equations, an numerical self-consistent solution of three-dimension cube GaAs quantum dot is carried out based on spin-density-functional theory (SDFT). The electronic properties such as total ground state electronic energy, electron density are obtained, and a comparison with the electron density of the two-dimension square GaAs QD with same condition (electron number, spin, length) is hold..
Chinese Journal of Quantum Electronics
- Publication Date: Jun. 01, 2004
- Vol. 21, Issue 3, 371 (2004)
Optical properties of nano-composite material doped with Eu3+
[in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
Optical properties of YOCl:Eu3+ powders and EuCl3 solution embedded in nanoporous glass were investigated. In comparison with those in the normal micro-powder phosphor, emission spectra of Eu3+ in nano-YOCl:Eu3+ became much broader. Blueshift (7 nm) was observed in the lines due to 5D0→7F2 transition and Eu-O charge trOptical properties of YOCl:Eu3+ powders and EuCl3 solution embedded in nanoporous glass were investigated. In comparison with those in the normal micro-powder phosphor, emission spectra of Eu3+ in nano-YOCl:Eu3+ became much broader. Blueshift (7 nm) was observed in the lines due to 5D0→7F2 transition and Eu-O charge transfer excitation band. The ratio intensities of the 5D0→7F1 transition to the 5D0→7F2 transition of Eu3+ became larger and changed at different excitation wavelengths (254 nm and 393 nm). In comparison with those in the bulk EuCl3 solution, nano-EuCl3 solution had neither small size effects nor quantum confinement effects. Luminescence due to upper levels of Eu3+ in the nano-solution was enhanced. This approach also combines the advantages of nanoporous glass in offering good chemical shielding and mechanical support. The results obtained indicate that this approach likely may make a new kind of luminescent material..
Chinese Journal of Quantum Electronics
- Publication Date: Jun. 01, 2004
- Vol. 21, Issue 3, 376 (2004)
Electrical measurement and simulation of Si/Si bonding structure
[in Chinese], [in Chinese], and [in Chinese]
Understanding of electrical performance for Si/Si bonding structure is of great importance for both study of interface and fabrication of micro-electronic elements. We firstly analyzed I-V performance for different Si/Si bonding structures, and then using SOS model made capacitance curve-fitting for n-Si/n-Si structureUnderstanding of electrical performance for Si/Si bonding structure is of great importance for both study of interface and fabrication of micro-electronic elements. We firstly analyzed I-V performance for different Si/Si bonding structures, and then using SOS model made capacitance curve-fitting for n-Si/n-Si structure. Comparing theoretical curve with experimental data, we got shifting voltage VFB and interfacial states density Din. These results availed to study the interface of silicon bonding structure..
Chinese Journal of Quantum Electronics
- Publication Date: Jun. 01, 2004
- Vol. 21, Issue 3, 381 (2004)
Study on orthogonal test for fabrication of nanometer Zn2+、Al3+ substituted nickel hydroxide
[in Chinese], [in Chinese], [in Chinese], and [in Chinese]
ano-scale α-phase nickel hydroxide electrode materials were fabricated by multi-ion substitution. XRD test indicates that the crystal is α-style and TEM shows that the particles are between 20 and 30 nanometers in size with an irregular shape. Optimum technological parameters are obtained through orthogonal test of theano-scale α-phase nickel hydroxide electrode materials were fabricated by multi-ion substitution. XRD test indicates that the crystal is α-style and TEM shows that the particles are between 20 and 30 nanometers in size with an irregular shape. Optimum technological parameters are obtained through orthogonal test of the substitution quantities of A13+ ions , Zn2+ ions, categories of anions , surfactants and reaction temperature. By using the optimized technological parameters, electrode materials with electrochemical capacity of 316 mA·h/g are prepared..
Chinese Journal of Quantum Electronics
- Publication Date: Jun. 01, 2004
- Vol. 21, Issue 3, 387 (2004)
Module design method for telemetry software of micro-satellite
[in Chinese]
A kind of module design method for software telemetry of micro-satellite is introduced in this paper. Compared with traditional hardware telemetry method, software telemetry can not only get correct parameters of satellite, but also reduce the power consumption, weight and size of satellite, shorten time to launch. It A kind of module design method for software telemetry of micro-satellite is introduced in this paper. Compared with traditional hardware telemetry method, software telemetry can not only get correct parameters of satellite, but also reduce the power consumption, weight and size of satellite, shorten time to launch. It is very useful to the reliability of satellite..
Chinese Journal of Quantum Electronics
- Publication Date: Jun. 01, 2004
- Vol. 21, Issue 3, 392 (2004)
Polarization analysis of optical system in airborne multi-band polarization CCD camera system
[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
The polarization change during transmission course was analyzed when the partially polarized light beam from an object passed CCD's optical system. A kind of specific case was calculated, and change ranges of polarization are given. Calculations show that polarization degree of partial polarized light beam presentsThe polarization change during transmission course was analyzed when the partially polarized light beam from an object passed CCD's optical system. A kind of specific case was calculated, and change ranges of polarization are given. Calculations show that polarization degree of partial polarized light beam presents certain distribution on the cross section of transmitted output beam from interface. Changes of polarization degree have not only relation to angle of incidence, but also location of point light source..
Chinese Journal of Quantum Electronics
- Publication Date: Jun. 01, 2004
- Vol. 21, Issue 3, 396 (2004)
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