[1] A Dubey, R Mishra, Y H Hsieh et al. Aluminum plasmonics enriched ultraviolet GaN photodetector with ultrahigh responsivity, detectivity, and broad bandwidth. Adv Sci, 7, 2002274(2020).
[2] A Gundimeda, S Krishna, N Aggarwal et al. Fabrication of non–polar GaN based highly responsive and fast UV photodetector. Appl Phys Lett, 110, 103507(2017).
[3] L Liu, C Yang, A Patanè et al. High-detectivity ultraviolet photodetectors based on laterally mesoporous GaN. Nanoscale, 9, 8142(2017).
[4] R X Yu, G D Wang, Y L Shao et al. From bulk to porous GaN crystal: Precise structural control and its application in ultraviolet photodetectors. J Mater Chem C, 7, 14116(2019).
[5] S Fang, D H Wang, X N Wang et al. Tuning the charge transfer dynamics of the nanostructured GaN photoelectrodes for efficient photoelectrochemical detection in the ultraviolet band. Adv Funct Mater, 31, 2103007(2021).
[6] D H Wang, X Liu, S Fang et al. Pt/AlGaN nanoarchitecture: Toward high responsivity, self-powered ultraviolet-sensitive photodetection. Nano Lett, 21, 120(2021).
[7] M Razeghi, A Rogalski. Semiconductor ultraviolet detectors. J Appl Phys, 79, 7433(1996).
[8] O Katz, V Garber, B Meyler et al. Gain mechanism in GaN Schottky ultraviolet detectors. Appl Phys Lett, 79, 1417(2001).
[9] C J Lee, S B Kang, H G Cha et al. GaN metal–semiconductor–metal UV sensor with multi-layer graphene as Schottky electrodes. Jpn J Appl Phys, 54, 06FF08(2015).
[10] S J Wang, Y Geng, Q B Zheng et al. Fabrication of highly conducting and transparent graphene films. Carbon, 48, 1815(2010).
[11] G Yang, L H Li, W B Lee et al. Structure of graphene and its disorders: A review. Sci Technol Adv Mater, 19, 613(2018).
[12] J Wang, J Song, X Mu et al. Optoelectronic and photoelectric properties and applications of graphene-based nanostructures. Mater Today Phys, 13, 100196(2020).
[13] F Lin, S W Chen, J Meng et al. Graphene/GaN diodes for ultraviolet and visible photodetectors. Appl Phys Lett, 105, 073103(2014).
[14] A V Babichev, H Zhang, P Lavenus et al. GaN nanowire ultraviolet photodetector with a graphene transparent contact. Appl Phys Lett, 103, 201103(2013).
[15] K Xu, C Xu, Y Y Xie et al. Graphene GaN-based Schottky ultraviolet detectors. IEEE Trans Electron Devices, 62, 2802(2015).
[16] S Y Wang, R S Chen, Y Ren et al. Highly-rectifying graphene/GaN Schottky contact for self-powered UV photodetector. IEEE Photonics Technol Lett, 33, 213(2021).
[17] H J Tian, Q L Liu, A Q Hu et al. Hybrid graphene/GaN ultraviolet photo-transistors with high responsivity and speed. Opt Express, 26, 5408(2018).
[18] F Yu, D Rümmler, J Hartmann et al. Vertical architecture for enhancement mode power transistors based on GaN nanowires. Appl Phys Lett, 108, 213503(2016).
[19] D H Wang, X Liu, Y Kang et al. Bidirectional photocurrent in p–n heterojunction nanowires. Nat Electron, 4, 645(2021).
[20] F Yu, S B Yao, F Römer et al. GaN nanowire arrays with nonpolar sidewalls for vertically integrated field-effect transistors. Nanotechnology, 28, 095206(2017).
[21] A Prabaswara, J W Min, R C Subedi et al. Direct growth of single crystalline GaN nanowires on indium tin oxide-coated silica. Nanoscale Res Lett, 14, 45(2019).
[22] X D Zhang, T He, W B Tang et al. Thermal oxidation of AlGaN nanowires for sub-250 nm deep ultraviolet photodetection. J Phys D, 53, 495105(2020).
[23] G N Liu, B M Wen, T Xie et al. Top–down fabrication of horizontally-aligned gallium nitride nanowire arrays for sensor development. Microelectron Eng, 142, 58(2015).
[24] M Behzadirad, M Nami, N Wostbrock et al. Scalable top-down approach tailored by interferometric lithography to achieve large-area single-mode GaN nanowire laser arrays on sapphire substrate. ACS Nano, 12, 2373(2018).
[25] S K Bae, H Kim, Y Lee et al. Roll-to-roll production of 30-inch graphene films for transparent electrodes. Nat Nanotechnol, 5, 574(2010).
[26] A C Ferrari, J C Meyer, V Scardaci et al. Raman spectrum of graphene and graphene layers. Phys Rev Lett, 97, 187401(2006).
[27] H C Zhang, F Z Liang, K Song et al. Demonstration of AlGaN/GaN-based ultraviolet phototransistor with a record high responsivity over 3.6 × 107 A/W. Appl Phys Lett, 118, 242105(2021).
[28] C H Zeng, W K Lin, T He et al. Ultraviolet-infrared dual-color photodetector based on vertical GaN nanowire array and graphene. Chin Opt Lett, 18, 112501(2020).
[29] G Z Shen, H R Chen, Z Lou. Growth of aligned SnS nanowire arrays for near infrared photodetectors. J Semicond, 41, 042602(2020).
[30] Y Wu, X Yan, X Zhang et al. A monolayer graphene/GaAs nanowire array Schottky junction self-powered photodetector. Appl Phys Lett, 109, 183101(2016).
[31] T He, Y K Zhao, X D Zhang et al. Solar-blind ultraviolet photodetector based on graphene/vertical Ga2O3 nanowire array heterojunction. Nanophotonics, 7, 1557(2018).
[32] M Kumar, H Jeong, K Polat et al. Fabrication and characterization of graphene/AlGaN/GaN ultraviolet Schottky photodetector. J Phys D, 49, 275105(2016).
