• Journal of Semiconductors
  • Vol. 41, Issue 8, 082004 (2020)
Qian Yang1、2, Yongzhou Xue1、2, Hao Chen1、2, Xiuming Dou1、2, and Baoquan Sun1、2
Author Affiliations
  • 1State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 2College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
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    DOI: 10.1088/1674-4926/41/8/082004 Cite this Article
    Qian Yang, Yongzhou Xue, Hao Chen, Xiuming Dou, Baoquan Sun. Photo-induced doping effect and dynamic process in monolayer MoSe2[J]. Journal of Semiconductors, 2020, 41(8): 082004 Copy Citation Text show less

    Abstract

    Dynamic processes of electron transfer by optical doping in monolayer MoSe2 at 6 K are investigated via measuring time resolved photoluminescence (PL) traces under different excitation powers. Time-dependent electron transfer process can be analyzed by a power-law distribution of t-α with α = 0.1–0.24, depending on the laser excitation power. The average electron transfer time of approximately 27.65 s is obtained in the excitation power range of 0.5 to 100 μW. As the temperature increases from 20 to 44 K, the energy difference between the neutral and charged excitons is observed to decrease.
    $I(t) = I(0){\left(\dfrac{t}{\tau }\right)^{ - \alpha }}.$(1)

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    ${\tau _{\rm{ave}}} = <t> = \dfrac{{\displaystyle\int\limits_0^\infty {I(0){{\left(\dfrac{t}{\tau }\right)}^{ - \alpha }} t{\rm{d}}t} }}{{\displaystyle\int\limits_0^\infty {I(0){{\left(\dfrac{t}{\tau }\right)}^{ - \alpha }}{\rm{d}}t} }} = \dfrac{{\displaystyle\int\limits_0^\infty {{t^{ - \alpha }} t{\rm{d}}t} }}{{\displaystyle\int\limits_0^\infty {{t^{ - \alpha }}{\rm{d}}t} }}.$(2)

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    Qian Yang, Yongzhou Xue, Hao Chen, Xiuming Dou, Baoquan Sun. Photo-induced doping effect and dynamic process in monolayer MoSe2[J]. Journal of Semiconductors, 2020, 41(8): 082004
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