• Laser & Optoelectronics Progress
  • Vol. 56, Issue 14, 141602 (2019)
Bin Shen*, Haiyuan Li, and Xu Zhang
Author Affiliations
  • Key Laboratory of High Power Laser and Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
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    DOI: 10.3788/LOP56.141602 Cite this Article Set citation alerts
    Bin Shen, Haiyuan Li, Xu Zhang. Properties of Sol-Gel-Modified SiO2 Antireflective Films by Spin Coating[J]. Laser & Optoelectronics Progress, 2019, 56(14): 141602 Copy Citation Text show less

    Abstract

    In this study, silica sol with decane as a solvent was prepared by the sol modification and solvent replacement method. A film with good uniformity was coated on 50 mm×50 mm×10 mm square KDP crystals using the single spin coating method. The optical properties of the film coated on the KDP crystals were tested using a spectrophotometer. The peak transmittance value of the KDP crystal substrate coated with the third harmonic frequency and the fundamental frequency of the second harmonic frequency antireflective films could achieve more than 99.5% at 378 nm and 835 nm, respectively. The defect control in the preparation process of the coating film was realized by the combination of the filtration and the ultrasonic cleaning technology. The third harmonic frequency antireflective film with defect control was coated on a high-cleanliness fused silica substrate and pretreated by laser conditioning before testing. The laser-induced damage threshold of the third harmonic frequency antireflective film reached (14.0 ± 2.1) J·cm -2 measured by a laser with 355 nm wavelength and 3 ns pulse width.
    Bin Shen, Haiyuan Li, Xu Zhang. Properties of Sol-Gel-Modified SiO2 Antireflective Films by Spin Coating[J]. Laser & Optoelectronics Progress, 2019, 56(14): 141602
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