• Journal of Semiconductors
  • Vol. 41, Issue 5, 052202 (2020)
Jie Zhang1、2、3、4, Shixin Hou1、2、3、4, Renjie Li1、2、3、4, Bingbing Chen1、2、3、4, Fuhua Hou1、2、3、4, Xinghua Cui1、2、3、4, Jingjing Liu1、2、3、4, Qi Wang1、2、3、4, Pengyang Wang1、2、3、4, Dekun Zhang1、2、3、4, Ying Zhao1、2、3、4, and Xiaodan Zhang1、2、3、4
Author Affiliations
  • 1Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin 300350, China
  • 2Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, Tianjin 300350, China
  • 3Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, China
  • 4Renewable Energy Conversion and Storage Center of Nankai University, Tianjin 300072, China
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    DOI: 10.1088/1674-4926/41/5/052202 Cite this Article
    Jie Zhang, Shixin Hou, Renjie Li, Bingbing Chen, Fuhua Hou, Xinghua Cui, Jingjing Liu, Qi Wang, Pengyang Wang, Dekun Zhang, Ying Zhao, Xiaodan Zhang. I/P interface modification for stable and efficient perovskite solar cells[J]. Journal of Semiconductors, 2020, 41(5): 052202 Copy Citation Text show less
    (Color online) Schematic diagram of the formation of passivation layer.
    Fig. 1. (Color online) Schematic diagram of the formation of passivation layer.
    (Color online) SEM and AFM images of (a, c) control and (b, d) passivated perovskite films on ITO/SnO2 substrates. (e) Device structure of the passivated perovskite solar cells. (f) XRD patterns of passivated and control perovskite films.
    Fig. 2. (Color online) SEM and AFM images of (a, c) control and (b, d) passivated perovskite films on ITO/SnO2 substrates. (e) Device structure of the passivated perovskite solar cells. (f) XRD patterns of passivated and control perovskite films.
    (Color online) (a) J–V curves of the control and passivated perovskite solar cells. (b) External quantum efficiency (EQE) spectra for the passivated and control devices.
    Fig. 3. (Color online) (a) J–V curves of the control and passivated perovskite solar cells. (b) External quantum efficiency (EQE) spectra for the passivated and control devices.
    (Color online) (a) Spectra of ultraviolet photoelectron spectroscopy (UPS). (b) Secondary electron cutoff and (c) valence band region near EF of the perovskite film without (control) and with MABr (2 mg/mL) deposited on ITO substrate. (d) The energy level diagram of PSCs. (e) Steady-state photoluminescence (PL) and (f) time-resolved PL (TRPL) spectra of the passivated and control perovskite film.
    Fig. 4. (Color online) (a) Spectra of ultraviolet photoelectron spectroscopy (UPS). (b) Secondary electron cutoff and (c) valence band region near EF of the perovskite film without (control) and with MABr (2 mg/mL) deposited on ITO substrate. (d) The energy level diagram of PSCs. (e) Steady-state photoluminescence (PL) and (f) time-resolved PL (TRPL) spectra of the passivated and control perovskite film.
    (Color online) I−V curves with the device structure of ITO/perovskite/Au, where the perovskite (a) without (control) and (b) with the passivation measured in the dark. (c) Steady-state photoluminescence (PL) and (d) time-resolved PL (TRPL) spectra of the passivated and control perovskite film. (e) The dark I−V characteristics of the perovskite devices with and without the MABr.
    Fig. 5. (Color online) I−V curves with the device structure of ITO/perovskite/Au, where the perovskite (a) without (control) and (b) with the passivation measured in the dark. (c) Steady-state photoluminescence (PL) and (d) time-resolved PL (TRPL) spectra of the passivated and control perovskite film. (e) The dark I−V characteristics of the perovskite devices with and without the MABr.
    (Color online) (a) Histogram distribution of the PCE for devices with control (40 cells) and passivated perovskite films (40 cells). (b) J−V curves and (c) EQE spectra with integrated JSC of the best passivated perovskite devices. (d) Current density measured for 300 s at the steady power output (SPO) with a fixed maximum voltage (0.97 V).
    Fig. 6. (Color online) (a) Histogram distribution of the PCE for devices with control (40 cells) and passivated perovskite films (40 cells). (b) J−V curves and (c) EQE spectra with integrated JSC of the best passivated perovskite devices. (d) Current density measured for 300 s at the steady power output (SPO) with a fixed maximum voltage (0.97 V).
    (Color online) (a) PCEs evolution of devices in ambient air with the room temperature of 25–30 °C, and the humidity of 20%–30%. (b) Devices kept at 65 °C in ambient air with encapsulation for 400 h.
    Fig. 7. (Color online) (a) PCEs evolution of devices in ambient air with the room temperature of 25–30 °C, and the humidity of 20%–30%. (b) Devices kept at 65 °C in ambient air with encapsulation for 400 h.
    (Color online) XRD patterns of (a) control and (b) passivated perovskite films after in humid air (with RH: 20%−30%) for 0, 100, 400, 700, and 1000 h.
    Fig. 8. (Color online) XRD patterns of (a) control and (b) passivated perovskite films after in humid air (with RH: 20%−30%) for 0, 100, 400, 700, and 1000 h.
    MABr concentrationJSC(mA/cm2) VOC(V) FF (%)Eff (%)
    Control22.601.1073.9818.39
    1 mg/mL22.611.1077.0119.15
    2 mg/mL22.751.1477.0319.97
    3 mg/mL22.531.1376.4719.46
    4 mg/mL21.901.1074.0817.84
    5 mg/mL21.981.1470.0217.54
    Table 1. Summary of the device performance with different concentrations of MABr treatment.
    Sampleτ1(ns) τ2(ns) τ1(%) τ2(%) A1A2
    Control1318222.2777.73620.89123.49
    Passivation1019021.3078.70602.58124.06
    Table 2. Summary of fitted results of TRPL of the passivated and control devices.
    Jie Zhang, Shixin Hou, Renjie Li, Bingbing Chen, Fuhua Hou, Xinghua Cui, Jingjing Liu, Qi Wang, Pengyang Wang, Dekun Zhang, Ying Zhao, Xiaodan Zhang. I/P interface modification for stable and efficient perovskite solar cells[J]. Journal of Semiconductors, 2020, 41(5): 052202
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