Quantum cascade superluminescent light emitters with high power and compact structure

Jialin Sun; Chuncai Hou; Hongmei Chen; Jinchuan Zhang; Ning Zhuo; Jiqiang Ning; Changcheng Zheng; Zhanguo Wang; Fengqi Liu; Ziyang Zhang

doi:10.1088/1674-4926/41/1/012301

Journals >Journal of Semiconductors >Volume 41 >Issue 1 >Page 012301 > Article

Journal of Semiconductors
Vol. 41, Issue 1, 012301 (2020)

Quantum cascade superluminescent light emitters with high power and compact structure

Jialin Sun^1、4, Chuncai Hou^2、3、4, Hongmei Chen⁴, Jinchuan Zhang², Ning Zhuo², Jiqiang Ning⁵, Changcheng Zheng⁶, Zhanguo Wang², Fengqi Liu², and Ziyang Zhang^1、4

Author Affiliations

¹School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei 230026, China

²Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

³The 718th Research Institute of China Shipbuilding Industry Corporation, Handan 056027, China

⁴Key Laboratory of Nanodevice and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China

⁵Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China

⁶Division of Natural and Applied Sciences, Duke Kunshan University, Kunshan 215316, China

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DOI: 10.1088/1674-4926/41/1/012301 Cite this Article

Jialin Sun, Chuncai Hou, Hongmei Chen, Jinchuan Zhang, Ning Zhuo, Jiqiang Ning, Changcheng Zheng, Zhanguo Wang, Fengqi Liu, Ziyang Zhang. Quantum cascade superluminescent light emitters with high power and compact structure[J]. Journal of Semiconductors, 2020, 41(1): 012301 Copy Citation Text

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(Color online) Illustration of (a) the band structure of the four-QW coupling and two-phonon resonance-based QC structure, and (b) the corresponding layered cross-sectional structure of the QC material.

Fig. 1. (Color online) Illustration of (a) the band structure of the four-QW coupling and two-phonon resonance-based QC structure, and (b) the corresponding layered cross-sectional structure of the QC material.

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(Color online) (a) Schematic diagram of the double-trench narrow ridge waveguide structure of SLE devices. (b) Corresponding scanning electron microscope image of the straight end. The top-view microscope images of SLE devices with (c) 8°- or (d) 12°-inclined TW.

Fig. 2. (Color online) (a) Schematic diagram of the double-trench narrow ridge waveguide structure of SLE devices. (b) Corresponding scanning electron microscope image of the straight end. The top-view microscope images of SLE devices with (c) 8°- or (d) 12°-inclined TW.

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Fig. 3. (Color online) Schematic drawings (left) and optical field simulations (right) of the SLEs with (a) α = 0°, (b) α = 8°, or (c) α = 12°, respectively.

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Fig. 4. (Color online) Emission characteristics of SLEs measured under quasi-CW (15 kHz, 2 μs) mode at 80 K: (a) L–I curve of the SLE with α = 8°, and the inset is the corresponding lasing spectrum at 780 mA; (b) L–I curve and (c) emission spectra of the coated SLE.

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Fig. 5. (Color online) (a) L–I curve and (b) emission spectra of SLEs with α = 12° measured under quasi-CW (15 kHz, 2 μs) regime at 80 K.

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