[18] D H Kim, J a D Alamo, P Chen et al. 50-nm E-mode In07Ga0.3As PHEMTs on 100-mm InP substrate with fmax> 1 THz, 30.6. 1-30.6. 4(2010).

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- Journal of Infrared and Millimeter Waves
- Vol. 43, Issue 3, 329 (2024)
References

Rui-Ze FENG, Shu-Rui CAO, Zhi-Yu FENG, Fu-Gui ZHOU, Tong LIU, Yong-Bo SU, Zhi JIN. InGaAs/InAlAs InP-based HEMT with the current cutoff frequency of 441 GHz[J]. Journal of Infrared and Millimeter Waves, 2024, 43(3): 329
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