Rui-Ze FENG, Shu-Rui CAO, Zhi-Yu FENG, Fu-Gui ZHOU, Tong LIU, Yong-Bo SU, Zhi JIN. InGaAs/InAlAs InP-based HEMT with the current cutoff frequency of 441 GHz[J]. Journal of Infrared and Millimeter Waves, 2024, 43(3): 329
- Journal of Infrared and Millimeter Waves
- Vol. 43, Issue 3, 329 (2024)
Fig. 1. A schematic cross-section of InP-based HEMT
Fig. 2. The EBL process with a PMMA/Al/UVIII resist stack
Fig. 3. SEM photograph of the T-Gate and gate recess of the InGaAs/InAlAs HEMT
Fig. 4. (a) DC output characteristics, (b) gm against IDS, and (c) transfer characteristics of the HEMT
Fig. 5. (a) The measured and modeled H21, MAG/MSG and U gains versus frequency for the Lg = 54.4 nm InGaAs/InAlAs HEMT at VGS = -0.35 V and VDS = 0.7 V, and (b) small-signal equivalent circuit model used in pervious work[16]
Fig. 6. Measured fT against IDS of the Lg = 54.4 nm InGaAs/InAlAs HEMT with VDS = 0.7 V
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Table 1. Small-signal model parameters of the Lg = 54.4 nm InGaAs/InAlAs HEMTs at VDS= 0.7 V, with different structures
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Table 2. Comparison with published InGaAs(InAs)/InAlAs HEMTs with Lg from 50 nm to 75 nm
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