Examination of the durability of interband cascade lasers against structural variations

Yu-Zhe LIN; Jeremy A. MASSENGALE; Wen-Xiang HUANG; Rui-Qing YANG; Tetsuya D. MISHIMA; Michael B. SANTOS

doi:10.11972/j.issn.1001-9014.2020.02.001

Journals >Journal of Infrared and Millimeter Waves >Volume 39 >Issue 2 >Page 137 > Article

Journal of Infrared and Millimeter Waves
Vol. 39, Issue 2, 137 (2020)

Examination of the durability of interband cascade lasers against structural variations

Yu-Zhe LIN^1、2、3, Jeremy A. MASSENGALE^2、4, Wen-Xiang HUANG^2、4, Rui-Qing YANG^2、*, Tetsuya D. MISHIMA⁴, and Michael B. SANTOS⁴

Author Affiliations

¹Laboratory of Solid-State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing00083, China

²School of Electrical and Computer Engineering，University of Oklahoma，Norman 73019，USA

³Center of Materials Science and Optoelectronics Engineering，University of the Chinese Academy of Sciences，Beijing 100049，China

⁴Homer L. Dodge Department of Physics and Astronomy，University of Oklahoma，Norman 73019，USA

show less

DOI: 10.11972/j.issn.1001-9014.2020.02.001 Cite this Article

Yu-Zhe LIN, Jeremy A. MASSENGALE, Wen-Xiang HUANG, Rui-Qing YANG, Tetsuya D. MISHIMA, Michael B. SANTOS. Examination of the durability of interband cascade lasers against structural variations[J]. Journal of Infrared and Millimeter Waves, 2020, 39(2): 137 Copy Citation Text

EndNote(RIS)

BibTex

Plain Text

show less

Fig. 1. Schematic drawing of layer structure for GaSb-based ICLs

Download full size | View in the Article

$X-ray diffraction data for wafers M368 (top) and M370 (middle) and a corresponding simulation (bottom) of an ω-2θ scan around the (004) reflection for the GaSb substrate. The scans are offset for clarity$

Fig. 2. X-ray diffraction data for wafers M368 (top) and M370 (middle) and a corresponding simulation (bottom) of an ω-2θ scan around the (004) reflection for the GaSb substrate. The scans are offset for clarity

Download full size | View in the Article

Fig. 3. Current-voltage-light characteristics for a 150-μm-wide device from M370 in cw operation. The inset is the cw lasing spectrum from a 100-μm-wide device at a various heat-sink temperature

Download full size | View in the Article

Fig. 4. Lasing wavelength of broad-area ICLs. Inset: pulsed lasing spectra (M368 and M370) at 300 K

Download full size | View in the Article

Fig. 5. Threshold current density vs temperature for devices from wafers M368 and M370. Symbols and colors are consistent with those in Fig.4. Two insets are pulsed lasing spectra for three devices near their thresholds

Download full size | View in the Article

Download Citation

Save the article for my favorites

Paper Information