Stimulated emission at 1.54 μm from erbium/oxygen-doped silicon-based light-emitting diodes

Jin Hong; Huimin Wen; Jiajing He; Jingquan Liu; Yaping Dan; Jens W. Tomm; Fangyu Yue; Junhao Chu; Chungang Duan

doi:10.1364/PRJ.417090

Journals >Photonics Research >Volume 9 >Issue 5 >Page 714 > Article

Photonics Research
Vol. 9, Issue 5, 714 (2021)

Stimulated emission at 1.54 μm from erbium/oxygen-doped silicon-based light-emitting diodes

Jin Hong^1、†, Huimin Wen^2、†, Jiajing He², Jingquan Liu², Yaping Dan^2、5、*, Jens W. Tomm³, Fangyu Yue^1、6、*, Junhao Chu^1、4, and Chungang Duan^1、7、*

Author Affiliations

¹Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai 200241, China

²National Key Laboratory of Science and Technology on Micro/Nano Fabrication Laboratory, Department of Micro/Nano Electronics, University of Michigan-Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai 200240, China

³Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie, 12489 Berlin, Germany

⁴National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China

⁵e-mail: yaping.dan@sjtu.edu.cn

⁶e-mail: fyyue@ee.ecnu.edu.cn

⁷e-mail: cgduan@clpm.ecnu.edu.cn

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DOI: 10.1364/PRJ.417090 Cite this Article Set citation alerts

Jin Hong, Huimin Wen, Jiajing He, Jingquan Liu, Yaping Dan, Jens W. Tomm, Fangyu Yue, Junhao Chu, Chungang Duan. Stimulated emission at 1.54 μm from erbium/oxygen-doped silicon-based light-emitting diodes[J]. Photonics Research, 2021, 9(5): 714 Copy Citation Text

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