[1]
[2]
[3]
[4] G Tang, M H Kwan, Z Zhang et al. High-speed, high-reliability GaN power device with integrated gate driver. Proc ISPSD, 76(2018).
[5] X D Li, M van Hove, M Zhao et al. 200 V enhancement-mode p-GaN HEMTs fabricated on 200 mm GaN-on-SOI with trench isolation for monolithic integration. IEEE Electron Device Lett, 38, 918(2017).
[6] X D Li, M van Hove, M Zhao et al. Suppression of the backgating effect of enhancement-mode p-GaN HEMTs on 200-mm GaN-on-SOI for monolithic integration. IEEE Electron Device Lett, 39, 999(2018).
[7] X D Li, K Geens, W M Guo et al. Demonstration of GaN integrated half-bridge with on-chip drivers on 200-mm engineered substrates. IEEE Electron Device Lett, 40, 1499(2019).
[8]
[9] X D Li, M van Hove, M Zhao et al. Investigation on carrier transport through AlN nucleation layer from differently doped Si(111) substrates. IEEE Trans Electron Devices, 65, 1721(2018).
[10] X D Li, M Zhao, B Bakeroot et al. Buffer vertical leakage mechanism and reliability of 200-mm GaN-on-SOI. IEEE Trans Electron Devices, 66, 553(2019).
[11]
[12] X S Liu, K J Chen. GaN single-polarity power supply bootstrapped comparator for high-temperature electronics. IEEE Electron Device Lett, 32, 27(2011).
[13] M van Hove, S Boulay, S R Bahl et al. CMOS process-compatible high-power low-leakage AlGaN/GaN MISHEMT on silicon. IEEE Electron Device Lett, 33, 667(2012).
[14] T L Wu, D Marcon, S Z You et al. Forward bias gate breakdown mechanism in enhancement-mode p-GaN gate AlGaN/GaN high-electron mobility transistors. IEEE Electron Device Lett, 36, 1001(2015).
[15]
[16] X D Li, B Bakeroot, Z C Wu et al. Observation of dynamic
