• Chinese Optics Letters
  • Vol. 19, Issue 10, 101401 (2021)
Yufei Jia1、2, Yufei Wang1、3, Xuyan Zhou1, Linhai Xu1、2, Pijie Ma1、3, Jingxuan Chen1、2, Hongwei Qu1, and Wanhua Zheng1、2、3、4、*
Author Affiliations
  • 1Laboratory of Solid State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • 3College of Future Technology, University of Chinese Academy of Sciences, Beijing 101408, China
  • 4State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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    DOI: 10.3788/COL202119.101401 Cite this Article Set citation alerts
    Yufei Jia, Yufei Wang, Xuyan Zhou, Linhai Xu, Pijie Ma, Jingxuan Chen, Hongwei Qu, Wanhua Zheng. Narrow vertical beam divergence angle for display applications of 645 nm lasers[J]. Chinese Optics Letters, 2021, 19(10): 101401 Copy Citation Text show less
    Schematic of the sectional refractive index distribution (left axis) and the optical NFP distribution (right axis). The inset shows the detail of the active region.
    Fig. 1. Schematic of the sectional refractive index distribution (left axis) and the optical NFP distribution (right axis). The inset shows the detail of the active region.
    Calculated conduction energy band diagram at different doping levels. The inset shows the ΔEc between the waveguide layer and the p-cladding layer at different doping levels.
    Fig. 2. Calculated conduction energy band diagram at different doping levels. The inset shows the ΔEc between the waveguide layer and the p-cladding layer at different doping levels.
    (a) Dependence of calculated Γ, vertical divergence, and RF/H on dME; (b) dependence of vertical divergence on dn−cladding.
    Fig. 3. (a) Dependence of calculated Γ, vertical divergence, and RF/H on dME; (b) dependence of vertical divergence on dn−cladding.
    Simulated far-field pattern (FFP) in the fast axis.
    Fig. 4. Simulated far-field pattern (FFP) in the fast axis.
    (a) Cavity length dependence of the inverse external differential quantum efficiency; (b) threshold current density versus the inverse cavity length.
    Fig. 5. (a) Cavity length dependence of the inverse external differential quantum efficiency; (b) threshold current density versus the inverse cavity length.
    Experimental L–I–V and WPE characteristics for 100 µm BA laser with a 1500 µm long cavity. The laser device is operated with coated AR of 10% and HR of 99% under 3 A CW at 20°C heatsink temperature. The inset shows the spectrum at 1.5 A CW.
    Fig. 6. Experimental LIV and WPE characteristics for 100 µm BA laser with a 1500 µm long cavity. The laser device is operated with coated AR of 10% and HR of 99% under 3 A CW at 20°C heatsink temperature. The inset shows the spectrum at 1.5 A CW.
    FFP of simulation and experiment. The dashed line indicates 1/e2 of the peak value.
    Fig. 7. FFP of simulation and experiment. The dashed line indicates 1/e2 of the peak value.
    (a) Schematic of the low coherence red LD structure; (b) L–I–V curves; (c) the spectrum at 10 A; (d) the FFP at 10 A.
    Fig. 8. (a) Schematic of the low coherence red LD structure; (b) LIV curves; (c) the spectrum at 10 A; (d) the FFP at 10 A.
    (a) Schematic of the experimental setup of the speckle measurement; (b) speckle pattern of low coherence red LD structure; (c) speckle pattern of BA laser.
    Fig. 9. (a) Schematic of the experimental setup of the speckle measurement; (b) speckle pattern of low coherence red LD structure; (c) speckle pattern of BA laser.
    Yufei Jia, Yufei Wang, Xuyan Zhou, Linhai Xu, Pijie Ma, Jingxuan Chen, Hongwei Qu, Wanhua Zheng. Narrow vertical beam divergence angle for display applications of 645 nm lasers[J]. Chinese Optics Letters, 2021, 19(10): 101401
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