• Journal of Infrared and Millimeter Waves
  • Vol. 41, Issue 2, 511 (2022)
Jun-Jun QI1, Hong-Liang LYU1、*, Lin CHENG1, Yu-Ming ZHANG1, Yi-Men ZHANG1, Feng-Guo ZHAO2, and Lan-Yan DUAN2
Author Affiliations
  • 1School of Microelectronics,Xidian University,Key Laboratory of Wide Band-Gap;Semiconductor Materials and Devices,Xi’an 710071,China
  • 2ZTE Corporation,Shenzhen 518057,China
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    DOI: 10.11972/j.issn.1001-9014.2022.02.019 Cite this Article
    Jun-Jun QI, Hong-Liang LYU, Lin CHENG, Yu-Ming ZHANG, Yi-Men ZHANG, Feng-Guo ZHAO, Lan-Yan DUAN. A distributed small signal equivalent circuit modeling method for InP HEMT[J]. Journal of Infrared and Millimeter Waves, 2022, 41(2): 511 Copy Citation Text show less
    Distributed small signal equivalent circuit model for InP HEMT
    Fig. 1. Distributed small signal equivalent circuit model for InP HEMT
    Simplified Circuit for parasitic inductances extraction
    Fig. 2. Simplified Circuit for parasitic inductances extraction
    Parasitic inductances extraction form the intercept of Im(Zij)verse ω2
    Fig. 3. Parasitic inductances extraction form the intercept of Im(Zij)verse ω2
    Extrinsic capacitances extraction form the intercept of Im(Yij)verse ω
    Fig. 4. Extrinsic capacitances extraction form the intercept of Im(Yij)verse ω
    Simplified Circuit for parasitic resistances extraction
    Fig. 5. Simplified Circuit for parasitic resistances extraction
    Parasitic resistances extraction from the intercepts of(a)Re(Zij)verse 1/(Vgs-Vth)and(b)Re(Z11)verse 1/Ig
    Fig. 6. Parasitic resistances extraction from the intercepts of(a)Re(Zij)verse 1/(Vgs-Vth)and(b)Re(Z11)verse 1/Ig
    Cin values versus frequency
    Fig. 7. Cin values versus frequency
    Ris values versus frequency
    Fig. 8. Ris values versus frequency
    Tau values versus frequency
    Fig. 9. Tau values versus frequency
    gm, Gds values versus frequency
    Fig. 10. gm Gds values versus frequency
    Simulated and measured results of InP HEMT biased at Vds=4 V, Vgs=-0.75 V
    Fig. 11. Simulated and measured results of InP HEMT biased at Vds=4 V, Vgs=-0.75 V
    S-parameter modeling error of InP HEMT small signal model
    Fig. 12. S-parameter modeling error of InP HEMT small signal model

    Extrinsic

    parameters

    Vds=0V,

    Vgs=-2V

    Intrinsic

    parameters

    Vds=0V,

    Vgs=-2V

    Rg1.353Cgs/fF70.000
    Rd0.619Cds/fF52.958
    Rs0.369Cgd/fF71.962
    Lg/pH33.405Ris0
    Ld/pH25.569Gds/S0.100
    Ls/pH8.256Ggs/S0
    Cpg/fF12.600Gm/S0
    Cpd/fF13.153τ(ps)0
    Cpgd/fF4.657
    Table 1. Extracted extrinsic parameters values for the small signal model of pinch-off InP HEMT

    Extrinsic

    parameters

    Vds=4 V,

    Vgs=-0.75 V

    Intrinsic

    parameters

    Vds=4 V,

    Vgs=-0.75 V

    Rg1.353Cgs/fF217.800
    Rd0.619Cds/fF42.424
    Rs0.369Cgd/fF47.839
    Lg/pH33.405Ris0.286
    Ld/pH25.569Gds/S0.008
    Ls/pH8.256Ggs/S0.021
    Cpg/fF12.600Gm/S0.112
    Cpd/fF13.153τ(ps)0.830
    Cpgd/fF4.657
    Table 2. Extracted parameters values for the small signal model of InP HEMT
    Jun-Jun QI, Hong-Liang LYU, Lin CHENG, Yu-Ming ZHANG, Yi-Men ZHANG, Feng-Guo ZHAO, Lan-Yan DUAN. A distributed small signal equivalent circuit modeling method for InP HEMT[J]. Journal of Infrared and Millimeter Waves, 2022, 41(2): 511
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