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Journals >Journal of Infrared and Millimeter Waves >Volume 41 >Issue 2 >Page 511 > Article

Journal of Infrared and Millimeter Waves
Vol. 41, Issue 2, 511 (2022)

A distributed small signal equivalent circuit modeling method for InP HEMT

Jun-Jun QI¹, Hong-Liang LYU^1、*, Lin CHENG¹, Yu-Ming ZHANG¹, Yi-Men ZHANG¹, Feng-Guo ZHAO², and Lan-Yan DUAN²

Author Affiliations

¹School of Microelectronics，Xidian University，Key Laboratory of Wide Band-Gap;Semiconductor Materials and Devices，Xi’an 710071，China

²ZTE Corporation，Shenzhen 518057，China

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DOI: 10.11972/j.issn.1001-9014.2022.02.019 Cite this Article

Jun-Jun QI, Hong-Liang LYU, Lin CHENG, Yu-Ming ZHANG, Yi-Men ZHANG, Feng-Guo ZHAO, Lan-Yan DUAN. A distributed small signal equivalent circuit modeling method for InP HEMT[J]. Journal of Infrared and Millimeter Waves, 2022, 41(2): 511 Copy Citation Text

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References

[1] T Kulatunga, L Belostotski, J W Haslett. 400-to-800-MHz GaAs pHEMT-Based wideband LNA for radio-astronomy antenna-array feed. IEEE Microwave and Wireless Components Letters, 28, 99-911(2018).

[2] Jian-Jun GAO. RF and microwave modeling and measurement techniques for field effect transistors(2010).

[3] G Dambrine, A Cappy, F Heliodore. A new method for determining the FET small-signal equivalent circuit. IEEE Transactions on microwave theory and techniques, 36, 1151-1159(1988).

[4] M Berroth, R Bosch. High-frequency equivalent circuit of InP FETs for large-signal applications. IEEE transactions on Microwave Theory and Techniques, 39, 224-229(1991).

[5] A Jarndal, G Kompa. A new small signal model parameter extraction method applied to GaN devices, 1423-1426.

[6] C.Y Fan, J J Gao. A semi-analytical small signal parameter extraction method for millimeter HEMT. J. Infrared Millim. Waves, 33, 69-74(2014).

[7] Jin-Can ZHANG, Shao-Wei WANG, Min LIU et al. An improved GaN P-HEMT small-signal equivalent circuit with its parameter extraction. Microelectronics journal, 112, 105042(2021).

[8] T T L Nguyen, S D Kim. A gate-width scalable method of parasitic parameter determination for distributed HEMT small-signal equivalent circuit. IEEE Transactions on Microwave Theory and Techniques, 61, 3632-3638(2013).

[9] J Gao, X Li, H Wang. A new method for determination of parasitic capacitances for HEMT. Semiconductor science and technology, 20, 586(2005).

[10] A Jarndal, G Kompa. A new small-signal modeling approach applied to GaN devices. IEEE Transactions on Microwave Theory and Techniques, 53, 3440-3448(2005).

[11] P L Hower, N G Bechtel. Current saturation and small-signal characteristics of InP field-effect transistors. IEEE Transactions on Electron Devices, 20, 213-220(1973).

[12] M Berroth, R Bosch. Broad-band determination of the FET small-signal equivalent circuit. IEEE Transactions on Microwave Theory and techniques, 38, 891-895(1990).

[13] A R Alt, D Marti, C R Bolognesi. Transistor modeling: Robust small-signal equivalent circuit extraction in various HEMT technologies. IEEE Microwave Magazine, 14, 83-101(2013).

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Jun-Jun QI, Hong-Liang LYU, Lin CHENG, Yu-Ming ZHANG, Yi-Men ZHANG, Feng-Guo ZHAO, Lan-Yan DUAN. A distributed small signal equivalent circuit modeling method for InP HEMT[J]. Journal of Infrared and Millimeter Waves, 2022, 41(2): 511

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