Li-Jie LIU, You-Wen ZHAO, Yong HUANG, Yu ZHAO, Jun WANG, Ying-Li WANG, Gui-Ying SHEN, Hui XIE. Preparation of epi-ready InAs substrate surface for InAs/GaSb superlattice infrared detectors grown by MOCVD[J]. Journal of Infrared and Millimeter Waves, 2022, 41(2): 420
- Journal of Infrared and Millimeter Waves
- Vol. 41, Issue 2, 420 (2022)
Fig. 1. KLA-Tencor Candela particle metrology maps of the three InAs wafer surface treated by different wet cleaning processes（a）sample A，（b）sample B，and（c）sample C
Fig. 2. XPS spectra of wafer B and C，details of the binding energy given in Table 4
Fig. 3. Normarski microscope（a）sample B，and（b）sample C
Fig. 4. Hillocks defect from scanning electron microscopy after SL growth
Fig. 5. Transmission electron microscope of hillocks defect
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Table 1. Multi-step wet cleaning processes used in this study
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Table 2. TXRF results of the InAs wafer surface treated with different solution（1010 atoms/cm2）
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Table 3. Native oxide thickness measured by ellipsometer
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Table 4. Binding energy of the peaks in XPS spectra and In/As Atomic percent of sample B and C
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