Chenxia Wang, Jie Wei, Diao Fan, Yang Yang, Xiaorong Luo. A snapback-free and high-speed SOI LIGBT with double trenches and embedded fully NPN structure[J]. Journal of Semiconductors, 2020, 41(10): 102402

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- Journal of Semiconductors
- Vol. 41, Issue 10, 102402 (2020)

Fig. 1. (Color online) Schematic cross-sectional views of (a) DT-NPN LIGBT, (b) SEG LTIGBT, and (c) SSA LTIGBT.

Fig. 2. (Color online) Equivalent circuit of the DT-NPN LIGBT. R p-body and R p are distributed resistance at the cathode and anode region, respectively.

Fig. 3. (Color online) (a) Dependences of the BV and V on on N A. (b) Breakdown characteristics. Here I e and I h represent the electron current and hole current, respectively.

Fig. 4. (Color online) Snapback characteristics for different devices. W p/W n is the width of P+/N+ anode. ΔV SB is snapback voltage.

Fig. 5. (Color online) Total current density distribution and the flowlines for (a) the proposed LIGBT (at point A in Fig. 4 ), (b) the SEG LTIGBT (at point C in Fig. 4 ), and (c) the SSA LTIGBT (at point B in Fig. 4 ).

Fig. 6. (Color online) Influences of the N p and D p on (a) forward conduction characteristics at V G = 15 V, (b) conduction energy band distribution of P-well/N-buffer junction in the y -direction and (c) ΔV SB, V on and E off. qψ H and W H are the height and width of electron barrier. To entirely suppress the snapback by optimizing the N p and D p, the qψ H is about 0.75 eV.

Fig. 7. (Color online) Forward conduction characteristics. Insets: hole density distribution for different LIGBTs at the cathode side (@ y = 4.1 μ m) and schematic cross-sectional views of four different cathode structures for LIGBTs with the same anode structure as that of the proposed DT-NPN LIGBT.

Fig. 8. (Color online) Switching characteristics: (a) switching waves, the inset shows the simulation circuit with R G = 10 Ω and L S = 10 nH, (b) carrier distribution at different time, (c) current flowlines through the embedded NPN structure at t 3.

Fig. 9. (Color online) I A–V A characteristics for the DT-NPN and MSA LIGBT.

Fig. 10. (Color online) E off–V on tradeoff of different LIGBTs.

Fig. 11. (Color online) Key fabrication steps. (a) N-buffer and N-CS-layer implantations. (b) P-well and P-body implantations. (c) Trenches etching, oxidation, and poly-silicon deposition. (d) Implantations for N+/P+ regions and formation of metal contacts.
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Table 1. Key parameters for LIGBTs.

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