Fig. 1. (Color online) Schematic cross-sectional views of (a) DT-NPN LIGBT, (b) SEG LTIGBT, and (c) SSA LTIGBT.

Fig. 2. (Color online) Equivalent circuit of the DT-NPN LIGBT. R_p-body and R_p are distributed resistance at the cathode and anode region, respectively.

Fig. 3. (Color online) (a) Dependences of the BV and V_on on N_A. (b) Breakdown characteristics. Here I_e and I_h represent the electron current and hole current, respectively.

Fig. 4. (Color online) Snapback characteristics for different devices. W_p/W_n is the width of P⁺/N⁺ anode. ΔV_SB is snapback voltage.

Fig. 5. (Color online) Total current density distribution and the flowlines for (a) the proposed LIGBT (at point A in Fig. 4), (b) the SEG LTIGBT (at point C in Fig. 4), and (c) the SSA LTIGBT (at point B in Fig. 4).

Fig. 6. (Color online) Influences of the N_p and D_p on (a) forward conduction characteristics at V_G = 15 V, (b) conduction energy band distribution of P-well/N-buffer junction in the y-direction and (c) ΔV_SB, V_on and E_off. qψ_H and W_H are the height and width of electron barrier. To entirely suppress the snapback by optimizing the N_p and D_p, the qψ_H is about 0.75 eV.

Fig. 7. (Color online) Forward conduction characteristics. Insets: hole density distribution for different LIGBTs at the cathode side (@ y = 4.1 μm) and schematic cross-sectional views of four different cathode structures for LIGBTs with the same anode structure as that of the proposed DT-NPN LIGBT.

Fig. 8. (Color online) Switching characteristics: (a) switching waves, the inset shows the simulation circuit with R_G = 10 Ω and L_S = 10 nH, (b) carrier distribution at different time, (c) current flowlines through the embedded NPN structure at t₃.

Fig. 9. (Color online) I_A–V_A characteristics for the DT-NPN and MSA LIGBT.

Fig. 10. (Color online) E_off–V_on tradeoff of different LIGBTs.

Fig. 11. (Color online) Key fabrication steps. (a) N-buffer and N-CS-layer implantations. (b) P-well and P-body implantations. (c) Trenches etching, oxidation, and poly-silicon deposition. (d) Implantations for N⁺/P⁺ regions and formation of metal contacts.

Table 1. Key parameters for LIGBTs.