High power λ ~ 8.5 μm quantum cascade laser grown by MOCVD operating continuous-wave up to 408 K

Teng Fei; Shenqiang Zhai; Jinchuan Zhang; Ning Zhuo; Junqi Liu; Lijun Wang; Shuman Liu; Zhiwei Jia; Kun Li; Yongqiang Sun; Kai Guo; Fengqi Liu; Zhanguo Wang

doi:10.1088/1674-4926/42/11/112301

Journals >Journal of Semiconductors >Volume 42 >Issue 11 >Page 112301 > Article

Journal of Semiconductors
Vol. 42, Issue 11, 112301 (2021)

High power λ ~ 8.5 μm quantum cascade laser grown by MOCVD operating continuous-wave up to 408 K

Teng Fei^1、2、3, Shenqiang Zhai^1、2, Jinchuan Zhang^1、2, Ning Zhuo^1、2, Junqi Liu^1、2、3, Lijun Wang^1、2、3, Shuman Liu^1、2, Zhiwei Jia^1、2, Kun Li^1、2、3, Yongqiang Sun^1、2、3, Kai Guo^1、2, Fengqi Liu^1、2、3, and Zhanguo Wang^1、2、3

Author Affiliations

¹Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

²Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China

³Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

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DOI: 10.1088/1674-4926/42/11/112301 Cite this Article

Teng Fei, Shenqiang Zhai, Jinchuan Zhang, Ning Zhuo, Junqi Liu, Lijun Wang, Shuman Liu, Zhiwei Jia, Kun Li, Yongqiang Sun, Kai Guo, Fengqi Liu, Zhanguo Wang. High power λ ~ 8.5 μm quantum cascade laser grown by MOCVD operating continuous-wave up to 408 K[J]. Journal of Semiconductors, 2021, 42(11): 112301 Copy Citation Text

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Abstract

Robust quantum cascade laser (QCL) enduring high temperature continuous-wave (CW) operation is of critical importance for some applications. We report on the realization of lattice-matched InGaAs/InAlAs/InP QCL materials grown by metal-organic chemical vapor deposition (MOCVD). High interface quality structures designed for light emission at 8.5 μm are achieved by optimizing and precise controlling of growth conditions. A CW output power of 1.04 W at 288 K was obtained from a 4 mm-long and 10 μm-wide coated laser. Corresponding maximum wall-plug efficiency and threshold current density were 7.1% and 1.18 kA/cm², respectively. The device can operate in CW mode up to 408 K with an output power of 160 mW.

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$ {\eta }_{\mathrm{s}\mathrm{l}\mathrm{o}\mathrm{p}\mathrm{e}}={\eta }_{0}\mathrm{e}\mathrm{x}\mathrm{p}\left(-T/{T}_{1}\right) , $

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$ \hslash {\tau }_{\rm{IFR}}^{-1}=\frac{\pi {m}^{*}}{{{\hslash }}^{2}}{{\varDelta }}^{2}{{\Lambda }}^{2}\delta {U}^{2}{\sum }_{i}\left[{\phi }_{2}\left({z}_{i}\right){\phi }_{1}{\left({z}_{i}\right)}\right]^{2}{\rm e}^{\frac{-{{\Lambda }}^{2}{q}_{21}^{2}}{4}} , $

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