Behavior of exciton in direct−indirect band gap AlxGa1−xAs crystal lattice quantum wells

Yong Sun; Wei Zhang; Shuang Han; Ran An; Xin-Sheng Tang; Xin-Lei Yu; Xiu-Juan Miao; Xin-Jun Ma; Xianglian; Pei-Fang Li; Cui-Lan Zhao; Zhao-Hua Ding; Jing-Lin Xiao

doi:10.1088/1674-4926/45/3/032701

Journals >Journal of Semiconductors >Volume 45 >Issue 3 >Page 032701 > Article

Journal of Semiconductors
Vol. 45, Issue 3, 032701 (2024)

Behavior of exciton in direct−indirect band gap Al_xGa_1−xAs crystal lattice quantum wells

Yong Sun^1、2、*, Wei Zhang^1、2, Shuang Han^1、2, Ran An^1、2, Xin-Sheng Tang^1、2, Xin-Lei Yu^1、2, Xiu-Juan Miao^1、2、**, Xin-Jun Ma^1、2, Xianglian^1、2, Pei-Fang Li^1、2, Cui-Lan Zhao^1、2, Zhao-Hua Ding^1、2, and Jing-Lin Xiao^1、2

Author Affiliations

¹Institute of Condensed Matter Physics, Inner Mongolia Minzu University, Tongliao 028043, China

²College of Physics and Electronic Information, Inner Mongolia Minzu University, Tongliao 028043, China

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DOI: 10.1088/1674-4926/45/3/032701 Cite this Article

Yong Sun, Wei Zhang, Shuang Han, Ran An, Xin-Sheng Tang, Xin-Lei Yu, Xiu-Juan Miao, Xin-Jun Ma, Xianglian, Pei-Fang Li, Cui-Lan Zhao, Zhao-Hua Ding, Jing-Lin Xiao. Behavior of exciton in direct−indirect band gap Al_xGa_1−xAs crystal lattice quantum wells[J]. Journal of Semiconductors, 2024, 45(3): 032701 Copy Citation Text

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(Color online) (a) Schematic diagram of AlxGa1−xAs ground state lattice; (b) schematic diagram of exciton−phonon coupling in AlxGa1−xAs crystals; (c) schematic diagram of an exciton subject to parabolic potential.

Fig. 1. (Color online) (a) Schematic diagram of Al_xGa_1−xAs ground state lattice; (b) schematic diagram of exciton−phonon coupling in Al_xGa_1−xAs crystals; (c) schematic diagram of an exciton subject to parabolic potential.

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(Color online) (a) Schematic diagram of exciton energy band. (b) Relationship between exciton and phonon coupling coefficient and Al concentration.

Fig. 2. (Color online) (a) Schematic diagram of exciton energy band. (b) Relationship between exciton and phonon coupling coefficient and Al concentration.

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Fig. 3. (Color online) Exciton energy in Al_xGa₁₋_xAs crystal: (a) At

ω_{0} {= 10}^{13}

Hz, E_b, E₁ and E_g change with Al concentration in Al_xGa₁₋_xAs crystal; (b) schematic diagram of exciton energies in direct semiconductors and indirect semiconductors.

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Fig. 4. (Color online) (a) The influence of quantum dots and Al concentration on exciton ground state binding energy; (b) the dependence of exciton ground state binding energy on quantum dots and Al concentration; (c) the parabolic potential of the electron; (d) the parabolic potential of the hole; (e) schematic diagram of an exciton in an indirect semiconductor.

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	GaAs	Al_xGa₁₋_xAs	AlAs
$m_{e}$ (units of $m_{0}$ )	0.067	0.067 + 0.083x	0.15
$m_{h}$ (units of $m_{0}$ )	0.62	0.62 + 0.14x	0.76
$ℏ ω_{LO}$ (meV)	36.25	36.25 + 38.3x + 17.12x² − 5.11x³	50.09
$ε_{0}$	13.18	13.18 − 3.12x	10.06
$ε_{\infty}$	10.89	10.89 − 2.73x	8.16
$E_{g}$ (eV)	1.424	1.424 + 1.247x, x < 0.451.9 + 0.125x + 0.143x², x > 0.45	2.168

Table 1. Related parameters of Al_xGa_1−xAs crystals.

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