Molecular beam epitaxial growth of InAs quantum dots on GaAs for high characteristics temperature lasers

Ye YUAN; Xiang-Bin SU; Cheng-ao YANG; Yi ZHANG; Jin-Ming SHANG; Sheng-Wen XIE; Yu ZHANG; Hai-Qiao NI; Ying-Qiang XU; Zhi-Chuan NIU

doi:10.11972/j.issn.1001-9014.2020.06.001

[1] Y Tanaka, M Ishida, Y Maeda, et al. 2009 San Diego， United States， p. OWJ1. March 22(26).

[3] Z Wang, S Preble, C S Lee. 2015 Proceedings of Advanced Photonics： Integrated Photonics Research， Silicon and Nanophotonics， June 27–July 1， 2015 Boston， United States， p. IM4B(4).

[5] H Y Liu, I R Sellers, M Gutiérrez. Optimizing the growth of 1.3-μm InAs/InGaAs dots-in-a-well structure： Achievement of high-performance laser. Materials Science & Engineering C, 5, 779-783(25).

[6] H Heidemeyer, C Müller, O G Schmidt. Highly ordered arrays of In（Ga）As quantum dots on patterned GaAs（001） substrates. Journal of Crystal Growth, 261, 444-449(2004).

[7] H M Hao, X B Su, J Zhang. Molecular beam epitaxial growth of high quality InAs/GaAs quantum dots for 1.3-μm quantum dot lasers. Chin. Phys. B, 28, 078104(2019).

[8] Y Cao, T Yang, H Ji. Temperature sensitivity dependence on cavity length in p-type doped and undoped 1.3-μm InAs–GaAs quantum-dot lasers. IEEE Photonics Technology Letters, 20, 1860-1862(2008).

[9] K Otsubo, N Hatori, M Ishida. Temperature-insensitive eye-opening under 10-Gb/s modulation of 1.3-μm P-doped quantum-dot lasers without current adjustments. Japanese Journal of Applied Physics, 43, L1124-L1126(2004).

[10] V M Ustinov, N A Maleev, A E Zhukov. InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm. Applied Physics Letters, 74, 2815-2817(1999).

[11] F H Shao, Y Zhang, X B Su. 1.3-μm InAs/GaAs quantum dots grown on Si substrates. Chin. Phys. B, 27, 128105(2018).

[12] V M Ustinov, N A Maleev, A E Zhukov. InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm. Applied Physics Letters, 74, 2815-2817(1999).

[13] O Shchekin, J Ahn, D Deppe. High temperature performance of self-organised quantum dot laser with stacked p-doped active region. Electronics Letters, 38, 712-713(2002).

[14] Q Cao, S F Yoon, C Y Liu. Effects of rapid thermal annealing on optical properties of p-doped and undoped InAs/InGaAs dots-in-a-well structures. Journal of Applied Physics, 104, 033522(2008).

[15] S M Kim, Y Wang, M Keever. High-frequency modulation characteristics of 1.3-μm InGaAs quantum dot lasers. IEEE Photonics Technology Letters, 16, 377-379(2004).

[16] C Y Liu, S F Yoon, Q Cao. Low transparency current density and high temperature operation from ten-layer p-doped 1.3μm InAs∕InGaAs∕GaAs quantum dot lasers. Applied Physics Letters, 90, 227(2007).

[17] R Murray, D Childs, S Malik. 1.3 μm room temperature emission from InAs/GaAs Self-assembled quantum dots. Japanese Journal of Applied Physics, 38, 528-530(1999).

[18] D G Deppe, H Huang, O B Shchekin. Modulation characteristics of quantum-dot lasers： the influence of p-type doping and the electronic density of states on obtaining high speed. IEEE Journal of Quantum Electronics, 38, 1587-1593(2002).