Ye YUAN, Xiang-Bin SU, Cheng-ao YANG, Yi ZHANG, Jin-Ming SHANG, Sheng-Wen XIE, Yu ZHANG, Hai-Qiao NI, Ying-Qiang XU, Zhi-Chuan NIU. Molecular beam epitaxial growth of InAs quantum dots on GaAs for high characteristics temperature lasers[J]. Journal of Infrared and Millimeter Waves, 2020, 39(6): 667
- Journal of Infrared and Millimeter Waves
- Vol. 39, Issue 6, 667 (2020)
Fig. 1. The structure of the QD laser and the structure of the active region
Fig. 2. PL spectrum of the three QDs samples with growth temperature of 510℃，520℃ and 530℃
Fig. 3. Atomic force microscope （AFM）image of the three QDs samples （a）510 ℃，（b）520 ℃, and （c）530 ℃）
Fig. 4. P -I-V and WPE characteristics of the laser at CW mode
Fig. 5. Lasing spectrum at RT （The central wavelength is 1.3 μm）
Fig. 6. The power-current（P -I ） characteristics in different temperature （5∼80℃） and the fitting curve between threshold current and temperature
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