• Journal of Semiconductors
  • Vol. 42, Issue 8, 081801 (2021)
Liang Guo1、2、3, Yanan Guo1、2、3, Junxi Wang1、2、3, and Tongbo Wei1、2、3
Author Affiliations
  • 1Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • 3Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, China
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    DOI: 10.1088/1674-4926/42/8/081801 Cite this Article
    Liang Guo, Yanan Guo, Junxi Wang, Tongbo Wei. Ultraviolet communication technique and its application[J]. Journal of Semiconductors, 2021, 42(8): 081801 Copy Citation Text show less
    (Color online) An example of UVC system and network[4].
    Fig. 1. (Color online) An example of UVC system and network[4].
    The typical configuration of UVC.
    Fig. 2. The typical configuration of UVC.
    (Color online) The spectrum of solar radiation on earth[37].
    Fig. 3. (Color online) The spectrum of solar radiation on earth[37].
    Typical channel models of UVC: (a) LOS model, (b) NLOS model.
    Fig. 4. Typical channel models of UVC: (a) LOS model, (b) NLOS model.
    (Color online) The schematic of the experimental setup for UV laser-based NLOS UWOC[33].
    Fig. 5. (Color online) The schematic of the experimental setup for UV laser-based NLOS UWOC[33].
    (Color online) (a) Optical spectra of the LED under a bias voltage of 7 V[64]. (b) The small-signal frequency response of the system. The dashed line indicates the –3 dB bandwidth, which is approximately 29 MHz at distance = 0[64]. (c) The modulation bandwidth of the system at a distance of 5 m with different injection currents[60]. (d) The experimental setup and the flow diagram of the signal generation and offline processing[60].
    Fig. 6. (Color online) (a) Optical spectra of the LED under a bias voltage of 7 V[64]. (b) The small-signal frequency response of the system. The dashed line indicates the –3 dB bandwidth, which is approximately 29 MHz at distance = 0[64]. (c) The modulation bandwidth of the system at a distance of 5 m with different injection currents[60]. (d) The experimental setup and the flow diagram of the signal generation and offline processing[60].
    (Color online) (a) A 4 × 4 matrix device structure with a single device size of 60 μm, with the corresponding changes in device response frequency and current[75]. (b) Simplified cross-sectional schematic of a single DUV μLED presented in this work. Dimensions are not to scale[34]. (c) Plan view optical image of the fabricated DUV μLED array presented in this work[34]. (d) The 3 dB electrical modulation bandwidth of the DUV μLED as a function of current density[34].
    Fig. 7. (Color online) (a) A 4 × 4 matrix device structure with a single device size of 60 μm, with the corresponding changes in device response frequency and current[75]. (b) Simplified cross-sectional schematic of a single DUV μLED presented in this work. Dimensions are not to scale[34]. (c) Plan view optical image of the fabricated DUV μLED array presented in this work[34]. (d) The 3 dB electrical modulation bandwidth of the DUV μLED as a function of current density[34].
    (a) Normalized PL decay kinetics for AlGaN MQW structures with different well widths: (1) 5 nm, (2) 4.1 nm, and (3) 2.5 nm. Measurements were performed under excitation energy density of 25 mJ/cm2[90]. (b) Well-width dependence of carrier lifetimes for AlGaN MQW structures at excitation energy density of 70 μJ/cm2[90]. (c) Lifetime for different temperatures derived from the TD-TRPL results[91].
    Fig. 8. (a) Normalized PL decay kinetics for AlGaN MQW structures with different well widths: (1) 5 nm, (2) 4.1 nm, and (3) 2.5 nm. Measurements were performed under excitation energy density of 25 mJ/cm2[90]. (b) Well-width dependence of carrier lifetimes for AlGaN MQW structures at excitation energy density of 70 μJ/cm2[90]. (c) Lifetime for different temperatures derived from the TD-TRPL results[91].
    (Color online) (a) The experimental setup of the receiver side[66]. (b) The experimental setup[19]. (c) Experimental setup for solar-blind NLOS UV communication with diversity reception[30].
    Fig. 9. (Color online) (a) The experimental setup of the receiver side[66]. (b) The experimental setup[19]. (c) Experimental setup for solar-blind NLOS UV communication with diversity reception[30].
    Application of UVC in aircraft squad.
    Fig. 10. Application of UVC in aircraft squad.
    SourcesPowerWavelength (nm)Lifetime (h)EfficiencyFrequencyRef.
    Low-pressure mercury lamps~kW253.7~16 000~30%~ kHz[41]
    High-pressure mercury lamps~kW253.7–366.3~15 000~17%~ kHz[42, 43]
    KrF excimer laser~W248~500~4%~Hz[44]
    Nd:YAG laser~W266~1000~8%~Hz[44]
    UV LED~mW210–360~15 000~3%~MHz[45]
    Table 1. Comparison of DUV light sources in UVC system.
    YearLight sourceDetectorWavelength (nm)Bandwidth (MHz)Modulation schemeMax Range (m)SpeedRef.
    2020LEDSi APD279170PAM-1612.4 Gb/s[60]
    2020LEDSi APD279170PAM-1651.09 Gb/s[61]
    2019LEDSi APD2801531.51.18 Gb/s[62]
    2018LEDSi APD280153PAM-41.61.6 Gb/s[35]
    2018uLEDSi APD262438OFDM0.31 Gb/s[34]
    2018LEDPMT2661.9150921.6 Kb/s[31]
    2018LEDPIN265OOK1.92 Mb/s[63]
    2017LEDSi APD2942971 Mb/s[64]
    2017LEDPMT260OOK/PPM100[65]
    2016LEDPMT26540250 Kb/s[66]
    2016LEDPMT26010064 Kb/s[67]
    2016LEDPMT26520[19]
    2015LEDPMT265OOK3564 Kb/s[30]
    2015LEDPMT2652064 Kb/s[29]
    2014LEDPMT265OOK208 Kb/s[68]
    2010LEDPMT/APD250OOK/PPM2 Mb/s[69]
    2008LEDPMT255OOK[70]
    2008LEDSi APD250170100 Mb/s[18]
    2007LEDPMT271106[12]
    Table 2. Recent progress in UVC using LED as the light source.
    DetectorSpectral range (nm)Responsivity (A/W)Response time (ns)Dark current (nA)Ref
    PMT110–1100~1051–152–30[101]
    SiC PIN200–4000.085–0.13~103 × 10–8
    Si PIN200–1100~0.386–50~10
    AlGaN PIN220–280~0.15~6.5[102]
    Si APD260–11000.24–0.5~3 × 1061–100
    Table 3. Comparison of DUV detectors in UVC system.
    Liang Guo, Yanan Guo, Junxi Wang, Tongbo Wei. Ultraviolet communication technique and its application[J]. Journal of Semiconductors, 2021, 42(8): 081801
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