P. Satapathy, A. Pfuch, R. Grunwald, S. K. Das. Enhancement of photocatalytic activity by femtosecond-laser induced periodic surface structures of Si[J]. Journal of Semiconductors, 2020, 41(3): 032303

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- Journal of Semiconductors
- Vol. 41, Issue 3, 032303 (2020)

Fig. 1. (Color online) (a) FESEM images of SiLIPSS (double sided arrow : polarization direction of laser pulses). (b) Related spatial frequency map obtained by 2D-FFT.

Fig. 2. (Color online) UV photocatalytic degradation of MB dye (plot of C /C 0 versus time) with high pressure grown TiO2 thin films grown on Si substrate containing LIPSS (HPTiO2-SiLIPSS, quadratic symbols) and no LIPSS (HPTiO2-NoLIPSS, circles).

Fig. 3. (Color online) UV photocatalytic degradation of MB dye (plot of C /C 0 versus time) with low pressure grown TiO2 thin films grown on Si substrate containing LIPSS (LPTiO2-SiLIPSS, quadratic symbols) and no LIPSS (LPTiO2-NoLIPSS, circles).

Fig. 4. (Color online) ln(C 0/C ) versus photocatalysis time graph for high pressure grown TiO2 thin film on Si substrate containing no LIPSS (HPTiO2-NoLIPSS) and LIPSS (HPTiO2-SiLIPSS).

Fig. 5. (Color online) ln(C 0/C ) versus photocatalysis time graph for low pressure grown TiO2 thin film on Si substrate containing no LIPSS (LPTiO2-NoLIPSS) and LIPSS (LPTiO2-SiLIPSS).

Fig. 6. (Color online) (a) AFM image of the LIPSS on Si (Inset: Selected line for cross-sectional analysis). (b) Cross-sectional analysis across the selected line of (a).

Fig. 7. (Color online) Comparative dye decomposition activity of various samples with respect to standard reference thin film Pilkington ActivTM after 4 h of photocatalysis.
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Table 1. Nomenclature and description of samples.
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Table 2. Reaction rate constants of high pressure grown TiO2 thin film on Si substrate containing no LIPSS (HPTiO2-NoLIPSS) and LIPSS (HPTiO2-SiLIPSS).
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Table 3. Reaction rate constant of low pressure grown TiO2 thin film on Si substrate containing no LIPSS (LPTiO2-NoLIPSS) and LIPSS (LPTiO2-SiLIPSS).

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