Enhancement of photocatalytic activity by femtosecond-laser induced periodic surface structures of Si

P. Satapathy; A. Pfuch; R. Grunwald; S. K. Das

doi:10.1088/1674-4926/41/3/032303

Journals >Journal of Semiconductors >Volume 41 >Issue 3 >Page 032303 > Article

Journal of Semiconductors
Vol. 41, Issue 3, 032303 (2020)

Enhancement of photocatalytic activity by femtosecond-laser induced periodic surface structures of Si

P. Satapathy¹, A. Pfuch², R. Grunwald³, and S. K. Das¹

Author Affiliations

¹Department of Physics, School of Applied Sciences, KIIT Deemed to be University, Bhubaneswar, Odisha, 751024, India

²Department of Surface Engineering, INNOVENT e.V., Prüssingstraße 27b, D-07745 Jena, Germany

³Max Born Institute for Nonlinear Optics and Short Pulse Spectroscopy, Max Born Straße 2a, D-12489, Berlin, Germany

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DOI: 10.1088/1674-4926/41/3/032303 Cite this Article

P. Satapathy, A. Pfuch, R. Grunwald, S. K. Das. Enhancement of photocatalytic activity by femtosecond-laser induced periodic surface structures of Si[J]. Journal of Semiconductors, 2020, 41(3): 032303 Copy Citation Text

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(Color online) (a) FESEM images of SiLIPSS (double sided arrow : polarization direction of laser pulses). (b) Related spatial frequency map obtained by 2D-FFT.

Fig. 1. (Color online) (a) FESEM images of SiLIPSS (double sided arrow : polarization direction of laser pulses). (b) Related spatial frequency map obtained by 2D-FFT.

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(Color online) UV photocatalytic degradation of MB dye (plot of C/C0 versus time) with high pressure grown TiO2 thin films grown on Si substrate containing LIPSS (HPTiO2-SiLIPSS, quadratic symbols) and no LIPSS (HPTiO2-NoLIPSS, circles).

Fig. 2. (Color online) UV photocatalytic degradation of MB dye (plot of C/C₀ versus time) with high pressure grown TiO₂ thin films grown on Si substrate containing LIPSS (HPTiO₂-SiLIPSS, quadratic symbols) and no LIPSS (HPTiO₂-NoLIPSS, circles).

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Fig. 3. (Color online) UV photocatalytic degradation of MB dye (plot of C/C₀ versus time) with low pressure grown TiO₂ thin films grown on Si substrate containing LIPSS (LPTiO₂-SiLIPSS, quadratic symbols) and no LIPSS (LPTiO₂-NoLIPSS, circles).

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Fig. 4. (Color online) ln(C₀/C) versus photocatalysis time graph for high pressure grown TiO₂ thin film on Si substrate containing no LIPSS (HPTiO₂-NoLIPSS) and LIPSS (HPTiO₂-SiLIPSS).

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Fig. 5. (Color online) ln(C₀/C) versus photocatalysis time graph for low pressure grown TiO₂ thin film on Si substrate containing no LIPSS (LPTiO₂-NoLIPSS) and LIPSS (LPTiO₂-SiLIPSS).

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Fig. 6. (Color online) (a) AFM image of the LIPSS on Si (Inset: Selected line for cross-sectional analysis). (b) Cross-sectional analysis across the selected line of (a).

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Fig. 7. (Color online) Comparative dye decomposition activity of various samples with respect to standard reference thin film Pilkington Activ^TM after 4 h of photocatalysis.

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Name of sample	Details of sample
HPTiO₂-SiLIPSS	High pressure grown TiO₂ thin film on Si surface containing LIPSS
HPTiO₂-NoLIPSS	High pressure grown TiO₂ thin film on Si surface containing no LIPSS
LPTiO₂-SiLIPSS	Low pressure grown TiO₂ thin film on Si surface containing LIPSS
LPTiO₂-NoLIPSS	Low pressure grown TiO₂ thin film on Si surface containing no LIPSS

Table 1. Nomenclature and description of samples.

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Name of sample	k (h^–1)	Enhancement factor
HPTiO₂-NoLIPSS	0.26	2.1
HPTiO₂-SiLIPSS	0.54

Table 2. Reaction rate constants of high pressure grown TiO₂ thin film on Si substrate containing no LIPSS (HPTiO₂-NoLIPSS) and LIPSS (HPTiO₂-SiLIPSS).

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