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Journals >
Laser & Optoelectronics Progress >
Volume 57 >
Issue 7 >
Page 072301 > Article
Laser & Optoelectronics Progress
Vol. 57, Issue 7, 072301 (2020)
Optimization and Preparation of GaN-Based LED Chip Electrode Structure
Pengfei Chao
1
, Yingchao Xu
2、3、*
, Chunhui Liu
2
, Tianyu Wu
1
, Yangyang Li
1
, and Jianning Liu
1
Author Affiliations
1
School of Electrical Engineering and Automation, Xiamen University of Technology, Xiamen, Fujian 361024, China
2
School of Optoelectronics and Communication Engineering, Xiamen University of Technology, Xiamen, Fujian 361024, China
3
Fujian Key Laboratory of Optoelectronic Technology and Devices, Xiamen University of Technology, Xiamen, Fujian 361024, China
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DOI:
10.3788/LOP57.072301
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Pengfei Chao, Yingchao Xu, Chunhui Liu, Tianyu Wu, Yangyang Li, Jianning Liu. Optimization and Preparation of GaN-Based LED Chip Electrode Structure[J]. Laser & Optoelectronics Progress, 2020, 57(7): 072301
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Pengfei Chao, Yingchao Xu, Chunhui Liu, Tianyu Wu, Yangyang Li, Jianning Liu. Optimization and Preparation of GaN-Based LED Chip Electrode Structure[J]. Laser & Optoelectronics Progress, 2020, 57(7): 072301
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Paper Information
Category: Optical Devices
Received: Oct. 8, 2019
Accepted: Nov. 6, 2019
Published Online: Mar. 28, 2020
The Author Email: Xu Yingchao (376876168@qq.com)
DOI:
10.3788/LOP57.072301
Recommended Topics
laser devices and laser physics
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