• Laser & Optoelectronics Progress
  • Vol. 57, Issue 7, 072301 (2020)
Pengfei Chao1, Yingchao Xu2、3、*, Chunhui Liu2, Tianyu Wu1, Yangyang Li1, and Jianning Liu1
Author Affiliations
  • 1School of Electrical Engineering and Automation, Xiamen University of Technology, Xiamen, Fujian 361024, China
  • 2School of Optoelectronics and Communication Engineering, Xiamen University of Technology, Xiamen, Fujian 361024, China
  • 3Fujian Key Laboratory of Optoelectronic Technology and Devices, Xiamen University of Technology, Xiamen, Fujian 361024, China
  • show less
    DOI: 10.3788/LOP57.072301 Cite this Article Set citation alerts
    Pengfei Chao, Yingchao Xu, Chunhui Liu, Tianyu Wu, Yangyang Li, Jianning Liu. Optimization and Preparation of GaN-Based LED Chip Electrode Structure[J]. Laser & Optoelectronics Progress, 2020, 57(7): 072301 Copy Citation Text show less

    Abstract

    Aim

    ing at the problem of uneven current distribution in GaN-based LED chip, the traditional electrode structure is optimized. By establishing a three-dimensional simulation model based on finite element analysis software COMSOL, the current distribution in the active layer of chip electrode with optimized structure and traditional structure is simulated respectively. The results show that the current distribution in the chip with optimized structure is more uniform. Then, LED chips of various structures are prepared and tested for photoelectric performance. Experimental results show that changing the shape of the N electrode to a fan-shaped structure can improve the light output efficiency of the LED. When the input current is 20 mA, the output light power of the LED chip is 31.84 mW, and the light extraction efficiency is 52.03%, which is 6.14% higher than that of the conventional LED chip.

    Pengfei Chao, Yingchao Xu, Chunhui Liu, Tianyu Wu, Yangyang Li, Jianning Liu. Optimization and Preparation of GaN-Based LED Chip Electrode Structure[J]. Laser & Optoelectronics Progress, 2020, 57(7): 072301
    Download Citation