• Journal of Semiconductors
  • Vol. 43, Issue 4, 040101 (2022)
Xiaoxing Ke1 and Yong Zhang2
Author Affiliations
  • 1Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, China
  • 2Electrical and Computer Engineering Department, University of North Carolina at Charlotte, Charlotte, NC 28223, USA
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    DOI: 10.1088/1674-4926/43/4/040101 Cite this Article
    Xiaoxing Ke, Yong Zhang. Preface to the Special Topic on In-Situ and in-operando Characterization of Semiconductor Materials and Devices[J]. Journal of Semiconductors, 2022, 43(4): 040101 Copy Citation Text show less
    References

    [1] S Jiang, Q Y Dai, J H Guo et al. In-situ/operando characterization techniques for organic semiconductors and devices. J Semicond, 43, 041101(2022).

    [2] Y Zhang, D J Smith. Comprehensive, in operando, and correlative investigation of defects and their impact on device performance. J Semicond, 43, 041102(2022).

    [3] L Y Li, Y F Cheng, Z Y Liu et al. Study of structure-property relationship of semiconductor nanomaterials by quantitative transmission electron microscopy. J Semicond, 43, 041103(2022).

    [4] Z Fang, Y Liu, C Y Song et al. In-situ monitoring of dynamic behavior of catalyst materials and reaction intermediates in semiconductor catalytic processes. J Semicond, 43, 041104(2022).

    [5] P L Zhao, L Li, G X J Chen et al. Structural evolution of low-dimensional metal oxide semiconductors under external stress. J Semicond, 43, 041105(2022).

    [6] X M Wu, X X Ke, M L Sui. Recent progress on advanced transmission electron microscopy characterization for halide perovskite semiconductors. J Semicond, 43, 041106(2022).

    Xiaoxing Ke, Yong Zhang. Preface to the Special Topic on In-Situ and in-operando Characterization of Semiconductor Materials and Devices[J]. Journal of Semiconductors, 2022, 43(4): 040101
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