Fig. 1. (Color online) Controllable growth of GaSb NWs by using the CMOS-compatible metal of Ag as the growth catalyst. (a–c) SEM image, diameter and length statistics, and XRD patterns of as-prepared Ag-catalyzed GaSb NWs. (d) HRTEM image of GaSb NW, insert is FFT image. (e) Scanning TEM image of an individual GaSb NW. (f) EDS of NW tip and body.

Fig. 2. (Color online) Electrical properties of the as-prepared Ag-catalyzed GaSb NWs. (a, b) Output and transfer characteristics of as-constructed GaSb NWFET. The inset is the corresponding device schematics. (c) Hole mobility of the corresponding NWFET. (d) Peak hole mobility statistic of as-constructed NWFETs.

Fig. 3. (Color online) NIR photodetection behaviors of as-prepared Ag-catalyzed GaSb NWs. (a)I–t curves of GaSb photodetector under different illuminations of λ = 850 nm to λ = 1550 nm at 0.1 V. (b, c) Incident light intensity-dependent photocurrent, responsivity and detectivity, respectively. (d) Rise and decay time of the as-fabricated photodetector under 1550 nm laser illumination.

Fig. 4. (Color online) NIR photodetection behaviors of as-fabricated GaSb NW flexible photodetector. (a) The photographs of as-fabricated flexible photodetector under different bending radius. (b) The time-resolved photoresponse of flexible photodetector under the illuminations of 850, 1310, and 1550 nm lasers with 0.1 V bias before bending. (c) The time-resolved photoresponse of photodetector under the illumination of 1550 nm laser after bending different cycles.

Table 1. Photodetection performance comparison of GaSb NW photodetector.